High Speed Power MOSFET KIA Semicon Tech KNF6140S N Channel Silicon Gate for Motor and Relay Drivers
Key Attributes
Model Number:
KNF6140S
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
11A
RDS(on):
530mΩ@10V,5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
2.6pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
194.5W
Input Capacitance(Ciss):
980pF@25V
Gate Charge(Qg):
15.7nC@10V
Mfr. Part #:
KNF6140S
Package:
TO-220F
Product Description
Product Overview
The KNX6140S is an N-Channel enhancement mode silicon gate power MOSFET designed for high voltage, high speed power switching applications. It offers high ruggedness, fast switching, and improved dv/dt capability, making it suitable for switching regulators, switching converters, solenoid drivers, motor drivers, and relay drivers.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Origin: Not specified
- Material: Silicon Gate Power MOSFET
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | KNP6140S | KNF6140S | Unit |
| Drain-source voltage | VDSS | 400 | 400 | V |
| Gate-source voltage | VGSS | ±30 | ±30 | V |
| Drain current continuous (Tc=25°C) | ID | 11 | 11* | A |
| Drain current continuous (Tc=100°C) | ID | 6.6 | 6.6* | A |
| Drain current pulsed [1] | IDM | 44 | 44* | A |
| Avalanche energy Repetitive [1] | EAR | 19.50 | 19.50 | mJ |
| Avalanche energy Single pulse [2] | EAS | 365 | 365 | mJ |
| Avalanche Current [1] | IAR | 11 | 11 | A |
| Peak diode recovery dv/dt [3] | dv/dt | 4.5 | 4.5 | V/ns |
| Total power dissipation (Tc=25°C) | PD | 194.5 | 40.2 | W |
| Derate above 25°C | 1.55 | 0.32 | W/°C | |
| Operating and Storage Temperature Range | TJ,TSTG | -55~+150 | -55~+150 | °C |
| Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | TL | 300 | 300 | °C |
| Gate Source ESD (HBM C = 100pF, R = 1.5KΩ) | VESD(G-S) | 2500 | 2500 | V |
| Thermal resistance,Junction-to-case | RθJC | 0.65 | 3.15 | °C/W |
| Thermal Resistance, Case-to-Sink Typ. | RθJS | 0.5 | - | °C/W |
| Thermal resistance,Junction-to-ambient | RθJA | 62.5 | 62.5 | °C/W |
| Drain-source breakdown voltage | BVDSS | 400 | 400 | V |
| Zero gate voltage drain current (VDS=400V ,VGS=0V) | IDSS | 1 | 1 | μA |
| Zero gate voltage drain current (VDS=320V ,TC=125 °C) | IDSS | 10 | 10 | μA |
| Gate-body leakage current Forward [6] (VGS=20V,VDS=0V) | IGSS | 1 | 1 | nA |
| Gate-body leakage current Reverse [6] (VGS=-20V,VDS=0V) | IGSS | -1 | -1 | nA |
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | 0.4 | 0.4 | V/°C |
| Gate threshold voltage (VDS=VGS, ID=250μA) | VGS(th) | 2.0 - 4.0 | 2.0 - 4.0 | V |
| Static drain-source on-resistance (VGS=10V,ID=5A) | RDS(on) | 530 - 640 | 530 - 640 | mΩ |
| Forward Transconductance[4] (VDS = 40 V, ID = 5 A) | gFS | 8 | 8 | S |
| Input capacitance (VDS=25V,VGS=0V,f=1.0MHz) | Ciss | 980 | 980 | pF |
| Output capacitance | Coss | 140 | 140 | pF |
| Reverse transfer capacitance | Crss | 2.6 | 2.6 | pF |
| Turn-on delay time (VDD=200V,ID=11A,RG=20Ω[4.5]) | td(on) | 33.5 | 33.5 | ns |
| Rise time | tr | 31.5 | 31.5 | ns |
| Turn-off delay time | td(off) | 83 | 83 | ns |
| Fall time | tf | 56 | 56 | ns |
| Total gate charge (VDS=320V,ID=11A,VGS=10V4.5]) | Qg | 15.7 | 15.7 | nC |
| Gate-source charge | Qgs | 4.6 | 4.6 | nC |
| Gate-drain charge | Qgd | 4.5 | 4.5 | nC |
| Drain-source diode forward voltage (VGS=0V,ISD=11A) | VSD | 1.4 | 1.4 | V |
| Continuous Drain-source current | IS | 11 | 11 | A |
| Pulsed Drain-source current | ISM | 44 | 44 | A |
| Reverse recovery time (VGS=0V,IS=11A, dIF / dt = 100 A/us) | trr | 430 | 430 | ns |
| Reverse recovery charge[4] | Qrr | 3.8 | 3.8 | μC |
2409302231_KIA-Semicon-Tech-KNF6140S_C5156069.pdf
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