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quality KIA Semicon Tech KCT040N10N MOSFET Device Qualified by JEDEC for Battery Management and Motor Control factory
quality KIA Semicon Tech KCT040N10N MOSFET Device Qualified by JEDEC for Battery Management and Motor Control factory

KIA Semicon Tech KCT040N10N MOSFET Device Qualified by JEDEC for Battery Management and Motor Control

Key Attributes
Model Number: KCT040N10N
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
172A
RDS(on):
3.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
33pF
Pd - Power Dissipation:
227W
Output Capacitance(Coss):
952pF
Input Capacitance(Ciss):
6.772nF
Gate Charge(Qg):
90nC@10V
Mfr. Part #:
KCT040N10N
Package:
TOLL-8
Product Description

Product Overview

This product utilizes Geener advanced MOS technology, offering extremely low on-resistance (RDS(on)) and an excellent QgxRDS(on) product (FOM). It is qualified according to JEDEC criteria and is ideal for motor control and drive, battery management, and Uninterruptible Power Supplies (UPS).

Product Attributes

  • Brand: KMOS Semiconductor
  • Certifications: JEDEC

Technical Specifications

ParameterSymbolTest ConditionMin.Typ.Max.UnitPart #
Drain-source voltageVDS100VKCB040N10N, KCT040N10N, KCX040N10N
Continuous drain currentIDTC = 25C172AKCB040N10N, KCT040N10N, KCX040N10N
Pulsed drain currentID pulseTC = 25C, tp limited by Tjmax480AKCB040N10N, KCT040N10N, KCX040N10N
Gate-Source voltageVGS-20+20VKCB040N10N, KCT040N10N, KCX040N10N
Power dissipationPtotTC = 25C227WKCB040N10N, KCT040N10N, KCX040N10N
Operating junction and storage temperatureTj , T stg-55+150CKCB040N10N, KCT040N10N, KCX040N10N
Avalanche energy, single pulseEASL=0.5mH, Rg=25109mJKCB040N10N, KCT040N10N, KCX040N10N
Drain-source breakdown voltageBVDSSVGS=0V, ID=250uA100VKCB040N10N, KCT040N10N, KCX040N10N
Gate threshold voltageVGS(th)VDS=VGS,ID=250uA234VKCB040N10N, KCT040N10N, KCX040N10N
Zero gate voltage drain currentIDSSVDS=100V,VGS=0V0.051AKCB040N10N, KCT040N10N, KCX040N10N
Zero gate voltage drain currentIDSSTj=125C, VDS=100V,VGS=0V10AKCB040N10N, KCT040N10N, KCX040N10N
Gate-source leakageIGSSVGS=20V,VDS=0V-10100nAKCB040N10N, KCT040N10N, KCX040N10N
Drain-source on-state resistanceRDS(on)VGS=10V, ID=50A3.44.2mKCB040N10N, KCT040N10N, KCX040N10N
Drain-source on-state resistanceRDS(on)VGS=10V, ID=50A3.24.0mKCX040N10N
TransconductancegfsVDS=5V,ID=50A50SKCB040N10N, KCT040N10N, KCX040N10N
Input CapacitanceCissVGS=0V, VDS=50V, f=1MHz952pFKCB040N10N, KCT040N10N, KCX040N10N
Reverse Transfer CapacitanceCrssVGS=0V, VDS=50V, f=1MHz33pFKCB040N10N, KCT040N10N, KCX040N10N
Output CapacitanceCossVGS=10V, VDS=50V, ID=20A48pFKCB040N10N, KCT040N10N, KCX040N10N
Gate Total ChargeQGVGS=10V, VDD=50V, RG_ext=3.067.72nCKCB040N10N, KCT040N10N, KCX040N10N
Gate-Drain chargeQgd19nCKCB040N10N, KCT040N10N, KCX040N10N
Gate-Source chargeQgs28nCKCB040N10N, KCT040N10N, KCX040N10N
Rise timetr32nsKCB040N10N, KCT040N10N, KCX040N10N
Turn-on delay timetd(on)48nsKCB040N10N, KCT040N10N, KCX040N10N
Turn-off delay timetd(off)115nsKCB040N10N, KCT040N10N, KCX040N10N
Fall timetf19nsKCB040N10N, KCT040N10N, KCX040N10N
Body Diode Forward VoltageVSDVGS=0V,ISD=50A0.891.3VKCB040N10N, KCT040N10N, KCX040N10N
Body Diode Reverse Recovery TimetrrIF=50A, dI/dt=100A/s80190nsKCB040N10N, KCT040N10N, KCX040N10N
Body Diode Reverse Recovery ChargeQrrIF=50A, dI/dt=100A/s19nCKCB040N10N, KCT040N10N, KCX040N10N
Thermal resistance, junction caseRthJC0.55C/WKCB040N10N, KCT040N10N, KCX040N10N
Thermal resistance, junction ambient(min. footprint)RthJA62C/WKCB040N10N, KCT040N10N, KCX040N10N
MarkingKCX040N10NKCX040N10N
PackageTO-263KCB040N10N, KCT040N10N
PackageTOLLKCX040N10N
PackingQty1000pcsKCB040N10N, KCT040N10N
PackingQty2000pcsKCX040N10N

2507111630_KIA-Semicon-Tech-KCT040N10N_C49328630.pdf

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