Powerful N Channel Mosfet KIA Semicon Tech KIA840SB 8A 500V for SMPS and TV Main Power Applications
Key Attributes
Model Number:
KIA840SB
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-
RDS(on):
900mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
110pF
Input Capacitance(Ciss):
960pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
KIA840SB
Package:
TO-263
Product Description
Product Overview
The KIA 840S is an 8A, 500V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. It features low on-resistance (RDS(ON)=0.7 typ), low gate charge, and a peak current vs. pulse width curve. This MOSFET is suitable for applications such as adaptors, TV main power, SMPS power supplies, and LCD panel power.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: 840S
- Channel Type: N-CHANNEL
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | TO-220 | TO-252, TO-263 | Units | Test Condition | Min | Typ | Max | |
| Drain-source voltage | VDSS | 500 | - | V | |||||
| Continuous drain current | ID | 8.0 | - | A | TC=25C | ||||
| Continuous drain current | ID | 5.5 | - | A | TC=100C | ||||
| Pulsed drain current | IDMa1 | 28 | - | A | |||||
| Power dissipation | PD | 160 | 100 | W | |||||
| Derating factor above 25 | 1.28 | 0.8 | W/C | ||||||
| Gate-source voltage | VGS | +20 | - | V | |||||
| Single pulse avalanche energy | EASa2 | 400 | - | mJ | L=10.0mH,Start TJ=25C | ||||
| Avalanche energy, repetitive | EARa1 | 30 | - | mJ | Pulse width tp<380s, <2% | ||||
| Avalanche current | IAR a1 | 7.0 | - | A | Pulse width tp<380s, <2% | ||||
| Peak diode recovery dv/dt | dv/dt a3 | 5.5 | - | V/ns | ISD=8A di/dt<100A/s,VDD< BVDS,Start TJ=25C | ||||
| Gate-source ESD(HBM-C=100pF,R=1.5K) | VESD(G-S) | 4000 | - | V | |||||
| Operating junction and storage temperature range | TJ ,TSTG | 150,-55 to150 | - | C | |||||
| Maximum temperature for soldering | TL | 300 | - | C | |||||
| Junction-case thermal resistance | RJC | 1.04 | - | C/W | Drain lead soldered to water cooled heatsink,PD adjusted for a peak junction temperature of +150 C | ||||
| Junction-ambient thermal resistance | RJA | 100 | - | C/W | 1 cubic foot chamber,free air | ||||
| Drain-source breakdown voltage | BVDSS | 500 | - | V | VGS=0V,ID=250A | ||||
| Bvdss temperature coefficient | BVDSS/TJ | - | 0.74 | V/C | Reference 25 ID=250uA | ||||
| Drain-source leakage current | IDSS | - | 25 | A | VDS=500V, VGS=0V TA=25C | ||||
| Drain-source leakage current | IDSS | - | 250 | A | VDS=400V, VGS=0V TA=125C | ||||
| Gate source breakdown voltage | VGSO | +20 | - | V | IGS=+1mA (open drain) | ||||
| Gate-source forward leakage | IGSS(F) | - | 10 | uA | VGS=20V | ||||
| Gate-source reverse leakage | IGSS(R) | - | -10 | uA | VGS=-20V | ||||
| Drain-source on-resistance | RDS(on) | - | 0.7 | 0.9 | VGS=10V,ID=4A | ||||
| Gate threshold voltage | VGS(TH) | 2 | 3 | 4 | V | VDS= VGS, ID=250uA | |||
| Forward transconductance | gfs | - | 8.5 | - | S | VDS=15V, ID=3A | |||
| Input capacitance | Ciss | - | 960 | - | pF | VDS=25V,VGS=0V f=1MHz | |||
| Output capacitance | Coss | - | 110 | - | pF | VDS=25V,VGS=0V f=1MHz | |||
| Reverse transfer capacitance | Crss | - | 10 | - | pF | VDS=25V,VGS=0V f=1MHz | |||
| Turn-on delay time | td(on) | - | 11 | - | ns | VDD=250V, ID=8A, RG=12,VGS=10V | |||
| Rise time | tr | - | 17 | - | ns | VDD=250V, ID=8A, RG=12,VGS=10V | |||
| Turn-off delay time | td(off) | - | 46 | - | ns | VDD=250V, ID=8A, RG=12,VGS=10V | |||
| Fall time | tf | - | 22 | - | ns | VDD=250V, ID=8A, RG=12,VGS=10V | |||
| Total gate charge | Qg | - | 24 | - | nC | VDD=250V, ID=8A, VGS=10V | |||
| Gate-source charge | Qgs | - | 4.0 | - | VDD=250V, ID=8A, VGS=10V | ||||
| Gate-drain charge | Qg d | - | 10 | - | VDD=250V, ID=8A, VGS=10V | ||||
| Continuous source currentbody biode | IS | - | - | 8 | A | ||||
| Maximum pulsed currentbody biode | ISM | - | - | 32 | A | ||||
| Diode forward voltage | VSD | - | - | 1.5 | V | IS=8A, VGS=0V | |||
| Reverse recovery time | trr | - | 175 | - | ns | IS=8A, VGS=0V dIF/dt=100A/s TJ=25C | |||
| Reverse recovery charge | Qrr | - | 0.75 | - | nC | IS=8A, VGS=0V dIF/dt=100A/s TJ=25C | |||
| Reverse recovery current | IRRM | - | 8.57 | - | A | IS=8A, VGS=0V dIF/dt=100A/s TJ=25C |
2409302333_KIA-Semicon-Tech-KIA840SB_C134927.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
