Low on resistance N channel MOSFET 90A 30V KIA Semicon Tech KNG3303C with improved dv dt capability
Key Attributes
Model Number:
KNG3303C
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
320pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
66W
Input Capacitance(Ciss):
3.28nF@15V
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
KNG3303C
Package:
DFN-8(3x3)
Product Description
90A, 30V N-CHANNEL MOSFET
This N-Channel MOSFET offers very low on-resistance (RDS(ON)), low Crss, and fast switching capabilities. It is 100% avalanche tested and features improved dv/dt capability. Ideal for PWM applications, load switches, and power management.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Part Number | Package | Drain-Source Voltage (VDSS) | Continuous Drain Current (ID @ TC=25C) | Continuous Drain Current (ID @ TC=100C) | Pulsed Drain Current (IDM) | Gate-Source Voltage (VGS) | Single Pulse Avalanche Energy (EAS) | Power Dissipation (PD @ TC=25C) DFN3*3/5*6 | Power Dissipation (PD @ TC=25C) TO-252 | Operating Junction/Storage Temperature (TJ, TSTG) | RDS(ON) @ VGS=10V, ID=20A DFN3*3/5*6 | RDS(ON) @ VGS=10V, ID=20A TO-252 | RDS(ON) @ VGS=4.5V, ID=15A DFN3*3/5*6 | RDS(ON) @ VGS=4.5V, ID=15A TO-252 | Drain-Source Breakdown Voltage (BVDSS) | Gate Threshold Voltage (VGS(TH)) | Input Capacitance (Ciss) | Output Capacitance (Coss) | Reverse Transfer Capacitance (Crss) | Turn-on Delay Time (td(on)) | Rise Time (tr) | Turn-off Delay Time (td(off)) | Fall Time (tf) | Total Gate Charge (Qg @ 10V) | Gate-Source Charge (Qgs) | Gate-Drain Charge (Qgd) | Maximum Continuous Drain-Source Diode Forward Current (IS) | Maximum Pulsed Drain-Source Diode Forward Current (ISM) | Diode Forward Voltage (VSD @ ISD=20A) | Reverse Recovery Time (Trr) | Reverse Recovery Charge (Qrr) |
| KNG3303C | DFN3*3 | 30 V | 90 A | 59 A | 400 A | 20 V | 289 mJ | 66 W | - | -55 to150 C | 2.6 m | - | 3.9 m | - | 30 V | 1.0 - 2.2 V | 3280 pF | 360 pF | 320 pF | 10 ns | 10 ns | 54 ns | 98 ns | 60 nC | 28 nC | 3 nC | 100 A | 400 A | 1.2 V | 20 ns | 10 nC |
| KNY3303C | DFN5*6 | 30 V | 90 A | 59 A | 400 A | 20 V | 289 mJ | 66 W | - | -55 to150 C | 2.6 m | - | 3.9 m | - | 30 V | 1.0 - 2.2 V | 3280 pF | 360 pF | 320 pF | 10 ns | 10 ns | 54 ns | 98 ns | 60 nC | 28 nC | 3 nC | 100 A | 400 A | 1.2 V | 20 ns | 10 nC |
| KND3303C | TO-252 | 30 V | 90 A | 59 A | 400 A | 20 V | 289 mJ | - | 70 W | -55 to150 C | - | 3.2 m | - | 4.5 m | 30 V | 1.0 - 2.2 V | 3280 pF | 360 pF | 320 pF | 10 ns | 10 ns | 54 ns | 98 ns | 60 nC | 28 nC | 3 nC | 100 A | 400 A | 1.2 V | 20 ns | 10 nC |
2411121110_KIA-Semicon-Tech-KNG3303C_C41369538.pdf
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