Power MOSFET KIA Semicon Tech KIA50N06CD N channel enhancement mode transistor for inverter systems
Key Attributes
Model Number:
KIA50N06CD
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
RDS(on):
13mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
130pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.45nF@25V
Pd - Power Dissipation:
90W
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
KIA50N06CD
Package:
TO-252
Product Description
Product Overview
The KIA50N06C is an N-channel enhancement mode power MOSFET utilizing KIA's LVMosfet technology. Its advanced process and cell structure are optimized for minimal on-state resistance and superior switching performance. This device is widely employed in UPS and power management for inverter systems.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Part Number | Package | Brand | VDSS (V) | ID (A) (TC=25C) | RDS(on) typ. (m) (VGS = 10 V) | EAS (mJ) | PD (W) (TC=25C) | RJC (C/W) (TO-220) | BVDSS (V) | IDSS (A) | IGSS (nA) | VGS(th) (V) | RG () | Ciss (pF) | Coss (pF) | Crss (pF) | td(on) (ns) | tr (ns) | td(off) (ns) | tf (ns) | Qg (nC) | Qgs (nC) | Qgd (nC) | IS (A) | ISM (A) | VSD (V) | trr (ns) | Qrr (C) |
| KIA50N06CD | TO-252 | KIA | 60 | 50 | 11 | 405 | 90 | 1.14 | 60 | 1 | 100 | 1.1 - 2.5 | 3.5 | 2450 | 170 | 130 | 15 | 72 | 180 | 79 | 52 | 11 | 12 | 50 | 200 | 1.4 | 20 | 0.02 |
| KIA50N06CP | TO-220 | KIA | 60 | 50 | 11 | 405 | 110 | 1.14 | 60 | 1 | 100 | 1.1 - 2.5 | 3.5 | 2450 | 170 | 130 | 15 | 72 | 180 | 79 | 52 | 11 | 12 | 50 | 200 | 1.4 | 20 | 0.02 |
2409302331_KIA-Semicon-Tech-KIA50N06CD_C2931913.pdf
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