P Channel MOSFET KIA Semicon Tech KPD7115A Featuring Low RDS ON and Fast Switching for VGA Vcore
Key Attributes
Model Number:
KPD7115A
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
153mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
410pF
Pd - Power Dissipation:
104W
Input Capacitance(Ciss):
2.109nF
Output Capacitance(Coss):
515pF
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
KPD7115A
Package:
TO-252
Product Description
Product Overview
This P-CHANNEL MOSFET, part number KPD7115A from KIA SEMICONDUCTORS, features advanced high cell density Trench technology for minimal conductive loss and fast switching. It offers low RDS(ON), low gate charge, and low thermal resistance, with 100% Avalanche and DVDS tested. Ideal for MB/VGA Vcore, SMPS 2nd Synchronous Rectifier, POL applications, and BLDC Motor drivers.
Product Attributes
- Brand: KIA
- Part Number: KPD7115A
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -150 | - | - | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-10A | - | 153 | 200 | m |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=-250uA | -2.0 | - | -4.0 | V |
| Drain-Source Leakage Current | IDSS | VDS=-150V,VGS=0V,TJ=25C | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Input Capacitance | Ciss | VDS=-40V , VGS=0V , f=1MHz | - | 2109 | - | pF |
| Output Capacitance | Coss | - | 515 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 410 | - | pF | |
| Total Gate Charge | Qg | VDS=-50V, VGS=-10V , ID=-3A | - | 30 | - | nC |
| Gate-Source Charge | Qgs | - | 6 | - | nC | |
| Gate-Drain Charge | Qg | - | 8.1 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=-50V,VGS=-10V, RG=3,ID=-3A | - | 28 | - | ns |
| Rise Time | Tr | - | 30 | - | ns | |
| Turn-Off DelayTime | Td(off) | - | 230 | - | ns | |
| Fall Time | Tf | - | 120 | - | ns | |
| Continuous Source Current | IS | VG=VD=0V, Force Current | - | - | -20 | A |
| Diode Forward Voltage | VSD | VGS=0V, IS=-5A , TJ=25C | - | - | -1.2 | V |
| Reverse Recovery Time | trr | IF=-5A , TJ=25C dI/dt=100A/s | - | 34 | - | nS |
| Reverse Recovery Charge | Qrr | - | 32 | - | nC |
Absolute Maximum Ratings
| Parameter | Symbol | Ratings | Unit |
| Drain-to-Source Voltage | VDS | -150 | V |
| Gate-to-Source Voltage | VGS | 20 | V |
| Continuous Drain Current, VGS @ -10V (TC=25C) | ID | -20 | A |
| Continuous Drain Current, VGS @ -10V (TC=100C) | ID | -12 | A |
| Pulsed Drain Current | IDM | -60 | A |
| Total Power Dissipation (TC=25C) | PD | 104 | W |
| Total Power Dissipation (TC=100C) | PD | 42 | W |
| Avalanche Energy | EAS | 30.2 | mJ |
| Avalanche Current | IAS | -11 | A |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | C |
Thermal Characteristics
| Parameter | Symbol | Typ. | Unit |
| Thermal Resistance, Junction-to-Ambient | RJA | 20 | C/W |
| Thermal Resistance, Junction-to-Case | RJC | 1.4 | C/W |
2507111630_KIA-Semicon-Tech-KPD7115A_C49328617.pdf
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