Durable 650V 15A N Channel MOSFET KIA Semicon Tech KIA65R300FS designed for AC DC power conversion
Key Attributes
Model Number:
KIA65R300FS
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
300mΩ@10V,7.5A
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Input Capacitance(Ciss):
800pF
Output Capacitance(Coss):
180pF
Pd - Power Dissipation:
34W
Gate Charge(Qg):
43nC@10V
Mfr. Part #:
KIA65R300FS
Package:
TO-220F-3
Product Description
Product Overview
This 15A, 650V N-Channel MOSFET, model 65R300 from KIA Semiconductors, is manufactured using advanced super-junction technology. It is designed to minimize conduction loss, offer superior switching performance, and provide high ruggedness, including the ability to withstand high energy pulses in avalanche and commutation modes. This device is well-suited for high-efficiency AC/DC power conversion in switching mode operations.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: 65R300
- Channel Type: N-CHANNEL
- Voltage Rating: 650V
- Current Rating: 15A
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | BVDSS | TJ=25C, VGS=0V,ID=250A | 650 | - | - | V |
| Zero gate voltage drain current | IDSS | VDS=650V ,VGS=0V | - | - | 1 | A |
| VDS=480V ,TC=125C | - | - | 10 | A | ||
| Gate-body leakage current | IGSS | VGS=30V,VDS=0V | - | - | 100 | nA |
| VGS=-30V,VDS=0V | - | -100 | - | nA | ||
| Breakdown voltage temperature coefficient | BVDSS/TJ | ID=250A,referenced to 25C | - | -0.6 | - | V/ C |
| On Characteristics | ||||||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2.5 | - | 4.5 | V |
| Static drain-source on-resistance | RDS(on) | VGS=10V,ID=7.5A | - | 0.27 | 0.3 | |
| Forward transconductance | gFS | VDS=40V,ID=7.5A (note4) | - | 16 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V,VGS=0V, f=1MHz | - | 800 | - | pF |
| Output capacitance | Coss | - | 180 | - | pF | |
| Reverse transfer capacitance | Crss | - | 8 | - | pF | |
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VDD=400V,ID=6.5A, RG=20 (note4,5) | - | 13 | - | ns |
| Rise time | tr | - | 11 | - | ns | |
| Turn-off delay time | td(off) | - | 100 | - | ns | |
| Fall time | tf | - | 12 | - | ns | |
| Total gate charge | Qg | VDS=480V,ID=6.5A , VGS=10V (note4,5) | - | 43 | - | nC |
| Gate-source charge | Qgs | - | 5 | - | nC | |
| Gate-drain charge | Qg d | - | 22 | - | nC | |
| Drain-source diode characteristics and maximum ratings | ||||||
| Drain-source diode forward voltage | VSD | VGS=0V,ISD=6.5A | - | - | 1.5 | V |
| Continuous drain-source current | IS | - | - | 12 | A | |
| Pulsed drain-source current | ISM | - | - | 40 | A | |
| Reverse recovery time | trr | VGS=0V,ISD=6.5A dlF/dt=100A/s (note4) | - | 345 | - | ns |
| Reverse recovery charge | Qrr | - | 4.5 | - | C | |
2410121331_KIA-Semicon-Tech-KIA65R300FS_C135553.pdf
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