Fast recovery diode N Channel MOSFET 4A 900V KIA Semicon Tech KND4390A for electronic applications
Key Attributes
Model Number:
KND4390A
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
4A
RDS(on):
3.6Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
26pF
Input Capacitance(Ciss):
495pF
Output Capacitance(Coss):
52pF
Pd - Power Dissipation:
90W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
KND4390A
Package:
TO-252
Product Description
Product Overview
This 4A, 900V N-Channel MOSFET from KIA SEMICONDUCTORS, model 4390A, utilizes a proprietary new planar technology to offer low gate charge for minimized switching loss and a fast recovery body diode. It is designed for applications such as CRT, TV/Monitor, and other general-purpose uses.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: 4390A
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | TO-252 Rating | TO-220F Rating | Unit |
| Drain-source breakdown voltage | BVDSS | 900 | V | |
| Gate-to-Source Voltage | VGSS | 30 | V | |
| Continuous drain current (TC=25C) | ID | 4 | A | |
| Pulsed Drain Current (at VGS=10V) | IDM | 16 | A | |
| Single pulse avalanche energy | EAS | 650 | mJ | |
| Peak Diode Recovery dv/dt | dv/dt | 5.0 | V/ns | |
| Power dissipation (TC=25C) | PD | 90 | 30 | W |
| Derate above 25C | 0.72 | 0.24 | W/C | |
| Maximum Temperature for Soldering (Leads) | TL | 300 | C | |
| Maximum Temperature for Soldering (Package Body) | TPAK | 260 | C | |
| Operating junction and storage temperature range | TJ ,TSTG | -55 to150 | C | |
| Drain-source leakage current (VDS=900V, VGS=0V) | IDSS | 1 | uA | |
| Drain-source leakage current (VDS=720V, TC=125C) | IDSS | 100 | uA | |
| Gate-source forward leakage (VGS=30V, VDS=0V) | IGSS | 100 | nA | |
| Drain-source on-resistance (VGS=10V,ID=2.0A) | RDS(on) | 3.6 (typ.) | ||
| Gate threshold voltage (VDS=VGS,ID=250uA) | VGS(TH) | 2.0 - 4.0 | V | |
| Forward Transconductance (VDS=15V,ID=4.0A) | gfs | 5.5 (typ.) | S | |
| Input capacitance (VDS=25V,VGS=0V, f=1MHz) | Ciss | 495 | pF | |
| Reverse transfer capacitance | Crss | 26 | pF | |
| Output capacitance | Coss | 52 | pF | |
| Total gate charge(10V) (VDD=400V, ID=4A, VGS=0~10V) | Qg | 15 | nC | |
| Gate-source charge | Qgs | 3.1 | nC | |
| Gate-drain charge | Qg d | 6.2 | nC | |
| Turn-on delay time (VDD=400V,VGS=10V, RG=12, ID=4A) | td(on) | 11 | ns | |
| Rise time | tr | 11 | ns | |
| Turn-off delay time | td(off) | 32 | ns | |
| Fall time | tf | 16 | ns | |
| Continuous Source Current | ISD | 4.0 | A | |
| Pulsed Source Current | ISM | 16 | A | |
| Diode forward voltage (IS=4.0A,VGS=0V) | VSD | 1.5 | V | |
| Reverse Recovery Time (VGS=0V,IF=4.0A, dIF/dt=100A/s) | trr | 135 | nS | |
| Reverse Recovery Charge | Qrr | 446 | nC | |
2508261745_KIA-Semicon-Tech-KND4390A_C7465115.pdf
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