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quality 50A 650V Silicon Power IGBT KIA Semicon Tech KGM50N65AI Suitable for Solar Inverters and UPS Systems factory
quality 50A 650V Silicon Power IGBT KIA Semicon Tech KGM50N65AI Suitable for Solar Inverters and UPS Systems factory

50A 650V Silicon Power IGBT KIA Semicon Tech KGM50N65AI Suitable for Solar Inverters and UPS Systems

Key Attributes
Model Number: KGM50N65AI
Product Custom Attributes
Mfr. Part #:
KGM50N65AI
Package:
TO-247
Product Description

Product Overview

The KIA SEMICONDUCTORS 50N65AI is a 50A, 650V Silicon Power IGBT designed for demanding applications. It features low VCE(sat), fast switching, high ruggedness, and short-circuit rating, making it ideal for solar inverters, uninterrupted power supplies, industrial inductive heating, and energy storage systems.

Product Attributes

  • Brand: KIA
  • Model: 50N65AI
  • Package: TO-247
  • Technology: Silicon Power IGBT

Technical Specifications

Parameter Symbol Value Unit Conditions
Collector-emitter voltage VCE 650 V Tvj25C
DC collector current IC 50 A limited by Tvjmax, TC=100C
Pulsed collector current ICpuls 100 A tp limited by Tvjmax
Diode forward current IF 50 A limited by Tvjmax, TC=100C
Diode pulsed current IFpuls 100 A tp limited by Tvjmax
Gate-emitter voltage VGE 20 V
Transient Gate-emitter voltage VGE 30 V
Power dissipation Ptot 275 W TC=25C
Operating junction temperature Tvj(0P) -40 to +150 C
Storage temperature Tstg -40 to +150 C
Soldering temperature 260 C wave soldering, 1.6mm from case for 10s
IGBT Thermal Resistance, Junction-Case R(J-C) 0.45 C/W
Collector-emitter breakdown voltage V(BR)CES 650 V VGE=0V, IC=250A
Collector-emitter breakdown voltage V(BR)CES 650 V VGE=0V, IC=1mA
Collector-emitter saturation voltage VCEsat 1.58 (typ.) V VGE=15V, IC=60A, Tvj=25C
Collector-emitter saturation voltage VCEsat 1.95 (typ.) V VGE=15V, IC=60A, Tvj=150C
Diode forward voltage VF 1.63 (typ.) V VGE=0V, IF=60A, Tvj=25C
Diode forward voltage VF 1.37 (typ.) V VGE=0V, IF=60A, Tvj=150C
Gate-emitter threshold voltage VGE(th) 4.2 - 5.8 V VCE=VGE, IC=250A
Zero gate voltage collector current ICES 1 (max.) mA VCE=650V, VGE=0V, Tvj=25C
Gate-emitter leakage current IGES 200 (max.) nA VCE=0V, VGE=20V
Transconductance gfs 77 (typ.) S VCE=20V, IC=60A
Input capacitance Cies 5500 (typ.) pF VCE=30V, VGE=0V, f=1MHz
Reverse transfer capacitance Cres 110 (typ.) pF VCE=30V, VGE=0V, f=1MHz
Gate charge QG 500 (typ.) nC VCC=520V, IC=60.0A, VGE=15V
Turn-on delay time td(on) 30 (typ.) nS VCC=400V, IC=60A, VGE=0.0/15V, Rg=12
Rise time tr 70 (typ.) nS VCC=400V, IC=60A, VGE=0.0/15V, Rg=12
Turn-off delay time td(off) 20 (typ.) nS VCC=400V, IC=60A, VGE=0.0/15V, Rg=12
Fall time tf 40 (typ.) nS VCC=400V, IC=60A, VGE=0.0/15V, Rg=12
Turn-on energy Eon 2.25 (typ.) mJ VCC=400V, IC=60A, VGE=0.0/15V, Rg=12
Turn-off energy Eoff 0.5 (typ.) mJ VCC=400V, IC=60A, VGE=0.0/15V, Rg=12
Diode reverse recovery time trr 133 (typ.) nS IF=40A, VR=300V, di/dt= 600A/s
Diode reverse recovery charge Qrr 1.48 (typ.) C IF=40A, VR=300V, di/dt= 600A/s
Diode peak reverse recovery current Irrm 21 (typ.) A IF=40A, VR=300V, di/dt= 600A/s

2411121110_KIA-Semicon-Tech-KGM50N65AI_C41369541.pdf

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