Built in damper diode and high current gain PNP transistor KTP TIP127 for power switching applications

Key Attributes
Model Number: TIP127
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
2W
Transition Frequency(fT):
-
Type:
PNP
Number:
-
Current - Collector(Ic):
5A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
TIP127
Package:
TO-220
Product Description

Product Overview

The TIP127 is a PNP transistor designed for high DC current gain and features electrical similarity to the popular TIP12 series. It includes a built-in damper diode between the collector and emitter, making it suitable for various power switching and amplification applications.

Product Attributes

  • Brand: KTP Semiconductor
  • Model: TIP127
  • Package: TO-220 Plastic-Encapsulate

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-Base VoltageVCBO100V
Collector-Emitter VoltageVCEO100V
Emitter-Base VoltageVEBO5V
Collector Current - ContinuousICA
Collector DissipationPCTa=252W
Junction and Storage TemperatureTJ, Tstg-55150
Collector-base breakdown voltageV(BR)CBOIc=1mA,IE=0100V
Collector-emitter breakdown voltageV(BR)CEOIc=30mA,IB=0100V
Emitter-base breakdown voltageV(BR)EBOIE=3mA,IC=05V
Collector cut-off currentICBOVCB=100V,IE=010A
Collector-emitter cut-off currentICEOVCE=50V,IE=010A
Emitter cut-off currentIEBOVEB=5V,IC=02mA
DC current gainhFE(2)VCE=4V,IC=4A100010000
DC current gainhFE(3)VCE=4V,IC=8A100
Collector-emitter saturation voltageVCE(sat)1IC=4A,IB=16mA2V
Collector-emitter saturation voltageVCE(sat)2IC=8A,IB=80mA4V
Base-emitter saturation voltageVBE(sat)IC=8A,IB=80mA4.5V
Base-emitter voltage*VBEVCE=4V,IC=4A2.8V
Collector output capacitanceCobVCB=10V,IE=0,f=0.1MHz200pF

2411220026_KTP-TIP127_C20613884.pdf

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