Built in damper diode and high current gain PNP transistor KTP TIP127 for power switching applications
Product Overview
The TIP127 is a PNP transistor designed for high DC current gain and features electrical similarity to the popular TIP12 series. It includes a built-in damper diode between the collector and emitter, making it suitable for various power switching and amplification applications.
Product Attributes
- Brand: KTP Semiconductor
- Model: TIP127
- Package: TO-220 Plastic-Encapsulate
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 100 | V | |||
| Collector-Emitter Voltage | VCEO | 100 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current - Continuous | IC | A | ||||
| Collector Dissipation | PC | Ta=25 | 2 | W | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | |||
| Collector-base breakdown voltage | V(BR)CBO | Ic=1mA,IE=0 | 100 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | Ic=30mA,IB=0 | 100 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=3mA,IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=100V,IE=0 | 10 | A | ||
| Collector-emitter cut-off current | ICEO | VCE=50V,IE=0 | 10 | A | ||
| Emitter cut-off current | IEBO | VEB=5V,IC=0 | 2 | mA | ||
| DC current gain | hFE(2) | VCE=4V,IC=4A | 1000 | 10000 | ||
| DC current gain | hFE(3) | VCE=4V,IC=8A | 100 | |||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=4A,IB=16mA | 2 | V | ||
| Collector-emitter saturation voltage | VCE(sat)2 | IC=8A,IB=80mA | 4 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=8A,IB=80mA | 4.5 | V | ||
| Base-emitter voltage* | VBE | VCE=4V,IC=4A | 2.8 | V | ||
| Collector output capacitance | Cob | VCB=10V,IE=0,f=0.1MHz | 200 | pF |
2411220026_KTP-TIP127_C20613884.pdf
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