100V N channel enhancement mode MOSFET KUU 5N10 SOT 89 package suitable for electronic applications
Key Attributes
Model Number:
5N10 SOT-89
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
5A
RDS(on):
100mΩ@10V,3A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
210pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
4nC@10V
Mfr. Part #:
5N10 SOT-89
Package:
SOT-89
Product Description
Product Overview
This document describes the 5N10, a 100V N-channel enhancement mode MOS Field Effect Transistor in an SOT-89 package. It offers key electrical characteristics for various applications.
Product Attributes
- Brand: YONGYUTAI
- Product Marking: 5N10
- Datasheet Revision: Rev.-2.0
Technical Specifications
| Characteristic | Symbol | Rating/Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | 100 | - | - | V | - |
| Gate- Source Voltage | VGS | - | - | +20 | V | - |
| Drain Current (continuous) | ID | - | - | 5 | A | (at TA = 25C) |
| Drain Current (pulsed) | IDM | - | - | 20 | A | - |
| Total Device Dissipation | PD | - | - | 2000 | mW | (at TA = 25C) |
| Thermal Resistance Junction-Ambient | RJA | - | 62 | - | /W | - |
| Junction/Storage Temperature | TJ,Tstg | -55 | - | 150 | - | |
| Drain-Source Breakdown Voltage | BVDSS | 100 | - | - | V | (ID =250uA,VGS=0V) |
| Gate Threshold Voltage | VGS(th) | 1 | 1.65 | 2.5 | V | (ID =250uA,VGS= VDS) |
| Zero Gate Voltage Drain Current | IDSS | - | - | 1 | uA | (VGS=0V, VDS= 100V) |
| Gate Body Leakage | IGSS | - | - | +100 | nA | (VGS=+20V, VDS=0V) |
| Static Drain-Source On-State Resistance | RDS(ON) | - | 86 | 113 | m | (ID=3A,VGS=10V) |
| (ID=1A,VGS=4.5V) | ||||||
| Diode Forward Voltage Drop | VSD | - | - | 1.3 | V | (ISD=3A,VGS=0V) |
| Input Capacitance | CISS | - | 210 | - | pF | (VGS=0V, VDS=50V,f=1MHz) |
| Common Source Output Capacitance | COSS | - | 30 | - | pF | (VGS=0V, VDS=50V,f=1MHz) |
| Reverse Transfer Capacitance | CRSS | - | 2 | - | pF | (VGS=0V, VDS=50V,f=1MHz) |
| Total Gate Charge | Qg | - | 4 | - | nC | (VDS=50V, ID=5A, VGS=10V) |
| Gate Source Charge | Qgs | - | 2 | - | nC | (VDS=50V, ID=5A, VGS=10V) |
| Gate Drain Charge | Qgd | - | 1 | - | nC | (VDS=50V, ID=5A, VGS=10V) |
| Turn-ON Delay Time | td(on) | - | 15 | - | ns | (VDS=50V ID=1.5A, RGEN=1,VGS=10V) |
| Turn-ON Rise Time | tr | - | 5 | - | ns | (VDS=50V ID=1.5A, RGEN=1,VGS=10V) |
| Turn-OFF Delay Time | td(off) | - | 22 | - | ns | (VDS=50V ID=1.5A, RGEN=1,VGS=10V) |
| Turn-OFF Fall Time | tf | - | 3 | - | ns | (VDS=50V ID=1.5A, RGEN=1,VGS=10V) |
2411191537_KUU-5N10-SOT-89_C42387181.pdf
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