TrenchFET technology N Channel MOSFET KUU NDS331N designed for load switching in portable electronics
Key Attributes
Model Number:
NDS331N
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
RDS(on):
25mΩ@4.5V,6A
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
574pF@10V
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
NDS331N
Package:
SOT-23
Product Description
Product Overview
This N-Channel MOSFET in a SOT-23 package is designed for efficient power switching applications. It features TrenchFET technology for enhanced performance and low on-resistance, making it suitable for load switching in portable devices and DC/DC converters.
Product Attributes
- Marking: NDS331N
- Equivalent Circuit: 1.GATE, 2.SOURCE, 3.DRAIN
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Static Electrical Characteristics | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| VGS(th) | VDS =VGS, ID =250A | 0.45 | 1 | V | ||
| IGSS | VDS =0V, VGS =12V | 100 | nA | |||
| IDSS | VDS =16V, VGS =0V | 1 | A | |||
| RDS(on) | VGS =4.5V, ID = 6A | 22 | 25 | m | ||
| RDS(on) | VGS =2.5V, ID =4A | 28 | 35 | m | ||
| Dynamic Electrical Characteristics | Qg | VDS =10V, VGS =4.5V, ID =6A | 7.7 | 10 | nC | |
| Ciss | VDS =10V, VGS =0V, f=1MHz | 574 | pF | |||
| Coss | VDS =10V, VGS =0V, f=1MHz | 70 | pF | |||
| Switching Characteristics | td(on) | VDD=10V RL=5.5, ID 3.6A, VGEN=4.5V,Rg=6 | 78.7 | ns | ||
| tr | VDD=10V RL=5.5, ID 3.6A, VGEN=4.5V,Rg=6 | 128 | ns | |||
| td(off) | VDD=10V RL=5.5, ID 3.6A, VGEN=4.5V,Rg=6 | 453 | ns | |||
| tf | VDD=10V RL=5.5, ID 3.6A, VGEN=4.5V,Rg=6 | 80.9 | ns | |||
| Maximum Ratings | VDS | 20 | V | |||
| ID | 6 | A | ||||
| PD | 1.25 | W |
2410121242_KUU-NDS331N_C5449148.pdf
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