Low Gate Charge N Channel MOSFET Leiditech FDMC86160 Suitable for Consumer Electronic Power Supplies

Name: Low Gate Charge N Channel MOSFET Leiditech FDMC86160 Suitable for Consumer Electronic Power Supplies
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: FDMC86160
Availability: InStock

Key Attributes

Model Number: FDMC86160

Product Custom Attributes

Drain To Source Voltage:

100V

Current - Continuous Drain(Id):

40A

RDS(on):

26mΩ@4.5V

Operating Temperature -:

-55℃~+150℃

Gate Threshold Voltage (Vgs(th)):

2.5V@250uA

Reverse Transfer Capacitance (Crss@Vds):

4.1pF

Number:

1 N-channel

Input Capacitance(Ciss):

1.1906nF

Pd - Power Dissipation:

72W

Gate Charge(Qg):

19.8nC@10V

Mfr. Part #:

FDMC86160

Package:

DFN5x6-8L

Product Description

Product Overview

The FDMC86160 is an N-Channel MOSFET designed using advanced SGT MOSFET technology. It offers low RDS(on), low gate charge, fast switching, and excellent avalanche characteristics, providing enhanced ruggedness. This device is suitable for applications such as consumer electronic power supplies, motor control, isolated DC-DC converters, and synchronous rectification.

Product Attributes

Brand: Leiditech
Product ID: FDMC86160
Technology: SGT MOSFET
Channel Type: N-Channel
Mode: Enhancement Mode

Technical Specifications

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
Drain source voltage	VDS	Tj=25			100	V
Gate source voltage	VGS	Tj=25			20	V
Continuous drain current¹⁾	ID	TC=25			40	A
Pulsed drain current²⁾	ID, pulse	TC=25			120	A
Power dissipation³⁾	PD	TC=25			72	W
Single pulsed avalanche energy⁵⁾	EAS				30	mJ
Operation and storage temperature	TstgTj		-55		150
Thermal resistance, junction-case	RJC			1.74		/W
Thermal resistance, junction-ambient⁴⁾	RJA			62		/W
Electrical Characteristics
Drain-source breakdown voltage	BVDSS	VGS=0 V, ID=250 A	100			V
Gate threshold voltage	VGS(th)	VDS=VGS, ID=250 A	1.0		2.5	V
Drain-source on-state resistance	RDS(ON)	VGS=10 V, ID=8 A		16	20	m
Drain-source on-state resistance	RDS(ON)	VGS=4.5 V, ID=6 A		26		m
Gate-source leakage current	IGSS	VGS=20 V			100	nA
Drain-source leakage current	IDSS	VDS=100 V, VGS=0 V			1	A
Input capacitance	Ciss	VGS=0 V, VDS=50 V, =1 MHz		1190.6		pF
Output capacitance	Coss	VGS=0 V, VDS=50 V, =1 MHz		194.6		pF
Reverse transfer capacitance	Crss	VGS=0 V, VDS=50 V, =1 MHz		4.1		pF
Turn-on delay time	td(on)	VGS=10 V, VDS=50 V, RG=2.2 , ID=10 A		17.8		ns
Rise time	tr	VGS=10 V, VDS=50 V, RG=2.2 , ID=10 A		3.9		ns
Turn-off delay time	td(off)	VGS=10 V, VDS=50 V, RG=2.2 , ID=10 A		33.5		ns
Fall time	tf	VGS=10 V, VDS=50 V, RG=2.2 , ID=10 A		3.2		ns
Total gate charge	Qg	ID=8 A, VDS=50 V, VGS=10 V		19.8		nC
Gate-source charge	Qgs	ID=8 A, VDS=50 V, VGS=10 V		2.4		nC
Gate-drain charge	Qgd	ID=8 A, VDS=50 V, VGS=10 V		5.3		nC
Gate plateau voltage	Vplateau	ID=8 A, VDS=50 V, VGS=10 V		3.2		V
Diode forward current	IS	VGS<Vth			40	A
Pulsed source current	ISP				120	A
Diode forward voltage	VSD	IS=8 A, VGS=0 V			1.3	V
Reverse recovery time	trr	IS=8 A, di/dt=100 A/s		50.2		ns
Reverse recovery charge	Qrr	IS=8 A, di/dt=100 A/s		95.1		nC
Peak reverse recovery current	Irrm	IS=8 A, di/dt=100 A/s			2.5	A
Package Information
Package Type						DFN5*6-8L
Package Marking						APG40N10NF
Ordering Information	Product ID	Pack	Marking	Qty(PCS)
	FDMC86160	DFN5*6-8L	FDMC86160	5000

Notes:

1) Calculated continuous current based on maximum allowable junction temperature.

2) Repetitive rating; pulse width limited by max. junction temperature.

3) Pd is based on max. junction temperature, using junction-case thermal resistance.

4) The value of RJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 .

5) VDD=50 V, RG=25 , L=0.3 mH, starting Tj=25 .

2409292333_Leiditech-FDMC86160_C3647067.pdf

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