Load switching P Channel TrenchFET Power MOSFET KUU AO3423 with power management and ESD protection
Key Attributes
Model Number:
AO3423
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2A
RDS(on):
150mΩ@2.5V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
37pF@4.5V
Number:
1 P-Channel
Input Capacitance(Ciss):
325pF@4.5V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
120nC@4.5V
Mfr. Part #:
AO3423
Package:
SOT-23-3L
Product Description
Product Overview
The AO3423 is a P-Channel TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It features ESD protection up to 2.0KV and offers a low on-state resistance for efficient power management.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | -2 | A | |||
| Pulsed Diode Current | IDM | -18 | A | |||
| Power Dissipation | PD | 1.4 | W | |||
| Thermal Resistance (Junction to Ambient, t5s) | RJA | 125 | /W | |||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = -250A | -20 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID = -250A | -0.4 | -1 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS = 12V | 10 | A | ||
| Zero gate voltage drain current | IDSS | VDS = -20V, VGS =0V | -1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS = -4.5V, ID = -2.5A | 59 | 120 | m | |
| VGS = -2.5V, ID = -2A | 72 | 150 | m | |||
| Forward transconductance | gfs | VDS = -4.5V, ID = -2.5A | 7 | S | ||
| Diode forward voltage | VSD | IS=1A,VGS=0V | -0.8 | -1.2 | V | |
| Input capacitance | Ciss | VDS = -4.5V,VGS =0V, f=1MHz | 325 | pF | ||
| Output capacitance | Coss | 63 | pF | |||
| Reverse transfer capacitance | Crss | 37 | pF | |||
| Total gate charge | Qg | VDS = -10V,VGS = -4.5V, ID = --2A | 3.2 | nC | ||
| Gate-source charge | Qgs | 0.6 | nC | |||
| Gate-drain charge | Qg | 0.9 | nC | |||
| Gate resistance | Rg | f=1MHz | 11.2 | |||
| Turn-on delay time | td(on) | VDD= -10V RL=3, ID -1A, VGEN=- 4.5V,Rg=3 | 11 | ns | ||
| Rise time | tr | 5.5 | ns | |||
| Turn-off delay time | td(off) | 22 | ns | |||
| Fall time | tf | 8 | ns | |||
| Body Diode Reverse Recovery Time | trr | If=-2A, dl/dt=100A/us | ns | |||
| Body Diode Reverse Recovery Charge | grr | If=-2A, dl/dt=100A/us | nC |
2410121941_KUU-AO3423_C33551025.pdf
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