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quality Durable KY BTA12-800B TRIAC Semiconductor Device for AC Motor Speed Regulation and Power Control factory
quality Durable KY BTA12-800B TRIAC Semiconductor Device for AC Motor Speed Regulation and Power Control factory

Durable KY BTA12-800B TRIAC Semiconductor Device for AC Motor Speed Regulation and Power Control

Key Attributes
Model Number: BTA12-800B
Product Custom Attributes
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
126A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BTA12-800B
Package:
TO-220
Product Description

Product Overview

The ShenZhenHanKingyuan Electronic CO.,Ltd BTA/BTB12 Series TRIACs are high-performance semiconductor devices designed for AC power control applications. Available in 3-quadrant and 4-quadrant configurations, these TRIACs offer a high on-state current of 12A and repetitive peak off-state voltages up to 1000V. They are suitable for a wide range of applications including washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation. The series is offered in various package types: TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), and TO-263.

Product Attributes

  • Brand: ShenZhenHanKingyuan Electronic CO.,Ltd
  • Origin: Shenzhen
  • Trademark: KY logo (registered)

Technical Specifications

Series Type VDRM/VRRM (V) IT(RMS) (A) VGT (V) Package
BTA/BTB12 3 Quadrants 800, 1000 12 ≤1.3 TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), TO-263
BTA/BTB12 4 Quadrants 800, 1000 12 ≤1.3 TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), TO-263
Parameter Condition Rating Unit
IT(RMS) R.M.S On-State Current Tc=110C 12 A
ITSM Surge On-State Current Tp=10ms 120/126 A
It for fusing Tp=10ms 78 As
PG(AV) Average Gate Power Dissipation Tj=125C 1 W
IGM Peak Gate Current tp=20us, Tj=125C 4 A
Tj Operating Junction Temperature -40~125 C
TSTG Storage Temperature -40~150 C
IDRM Repetitive Peak Off-State Current Tj=25C ≤5 uA
IDRM Repetitive Peak Off-State Current Tj=125C ≤1 mA
IRRM Repetitive Peak Reverse Current Tj=25C ≤5 uA
IRRM Repetitive Peak Reverse Current Tj=125C ≤1 mA
VTM Forward "on" voltage IT=17A, tp=380us 1.55 V
di/dt Critical rate of rise of on-state current I,II,III, F=100Hz, IG=2xIGT, tr ≤100ns ≥50 A/us
di/dt Critical rate of rise of on-state current IV, F=100Hz, IG=2xIGT, tr ≤100ns ≥10 A/us
IGT Gate trigger current I,II,III, VD=12V, RL=30Ω ≤5, ≤10, ≤25, ≤50, ≤25, ≤50 mA
IGT Gate trigger current IV, VD=12V, RL=30Ω ≤50, ≤100 mA
IH Holding current IT=0.2A ≤20, ≤25, ≤35, ≤50, ≤25, ≤50 mA
VGD Gate non-trigger voltage ALL, VD=VDRM, TJ=125°C,RL=3.3KΩ ≥0.2 V
dv/dt Critical-rate of rise of commutation voltage TJ=125°C, VD=2/3VDRM, Gate ≥40, ≥100, ≥400, ≥1000, ≥200, ≥400 V/us
Rth(j-c) Thermal resistance Junction to case 3.3 °C/W
Rth(j-a) Thermal resistance Junction to ambient 60 °C/W

2410121317_KY-BTA12-800B_C2831700.pdf

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