Power Control Silicon Controlled Rectifier KY BTW69-1200B with 55A RMS Current Capacity
Key Attributes
Model Number:
BTW69-1200B
Product Custom Attributes
Holding Current (Ih):
200mA
Voltage - On State(Vtm):
-
Average Gate Power Dissipation (PG(AV)):
-
Current - On State(It(RMS)):
55A
Peak Off - State Voltage(Vdrm):
1.2kV
Current - Surge(Itsm@f):
550A
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BTW69-1200B
Package:
TO-3P
Product Description
ShenZhenHanKingyuan Electronic CO.,Ltd BTW69 Series 55A SCRs
The BTW69 Series Standard SCRs from ShenZhenHanKingyuan Electronic CO.,Ltd are high-performance silicon-controlled rectifiers designed for a variety of power control applications. These SCRs offer a high RMS on-state current of 55A and are available with repetitive peak off-state voltages of 1000V and 1200V. Their robust design and specified electrical characteristics make them suitable for demanding applications such as washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation. The TO-3P Insulated package ensures reliable operation and ease of integration.
Product Attributes
- Brand: ShenZhenHanKingyuan Electronic CO.,Ltd
- Series: BTW69 Series
- Type: Standard SCRs
- Package: TO-3P Insulated
- Origin: Shenzhen
- Trademark: KY logo (registered trademark)
Technical Specifications
| Symbol | Parameter | Conditions | BTW69-1000B | BTW69-1200B | BTW69-1600B | Unit |
| VDRM VRRM | Repetitive Peak Off-State Voltage | 1000 | 1200 | 1600 | V | |
| IT(RMS) | R.M.S On-State Current | 55 | A | |||
| IT(AV) | Average On-State Current | 35 | A | |||
| ITSM | Surge On-State Current | F=50Hz,tp=10ms/8.3ms | 550 | A | ||
| It | It for fusing | Tp=10ms | 1500 | As | ||
| PG(AV) | Average Gate Power Dissipation | Tj=125C | 1 | W | ||
| PGM | Peak Gate Power Dissipation | Tj=125C | 10 | W | ||
| IGM | Peak Gate Current | tp=10us | 5 | A | ||
| Tj | Operating Junction Temperature | -40~125 | C | |||
| TSTG | Storage Temperature | -40~150 | C | |||
| IDRM | Repetitive Peak Off-State Current | Tc=125C | ≤8 | mA | ||
| IRRM | Repetitive Peak Reverse Current | Tc=125C | ≤8 | mA | ||
| VTM | Forward "on" voltage | IT=60A | ≤1.8 | V | ||
| VGD | Gate nontrigger voltage | VD=VDRM,Tj=125C, RL=3.3K | ≥0.2 | V | ||
| IL | Latching current | IG=1.2IGT | ≤250 | mA | ||
| IH | Holding current | VD=12V ,IGT=0.1A | ≤200 | mA | ||
| VGT | Gate trigger voltage | VD=12V | ≤1.5 | V | ||
| IGT | Gate trigger current | VD=12V,IT=0.1A | ≤70 | mA | ||
| dv/dt | Critical-rate of rise of commutation voltage | VD=2/3VDRM,Tj=125C,gate open circuit | ≥100 | V/us | ||
| di/dt | Critical-rate of rise of commutation current | IG=2XIG,tr100us, Tj=125C | ≥150 | A/us | ||
| Rth(j-c) | Thermal resistance Junction to case | 0.65 | C/W | |||
2410121252_KY-BTW69-1200B_C5448786.pdf
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