High power TRIAC KY BTA16-800B suitable for AC motor speed control and solid state relay applications

Key Attributes
Model Number: BTA16-800B
Product Custom Attributes
Holding Current (Ih):
50mA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
180A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BTA16-800B
Package:
TO-220
Product Description

ShenZhenHanKingyuan Electronic CO.,Ltd BTA/BTB16 Series TRIACs

The BTA/BTB16 Series TRIACs from ShenZhenHanKingyuan Electronic are high-performance components designed for AC power control applications. Available in 3 and 4 quadrant configurations, these TRIACs offer robust performance with an RMS on-state current of 16A and repetitive peak off-state voltages up to 1000V. They are suitable for a wide range of applications including washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.

Product Attributes

  • Brand: ShenZhenHanKingyuan Electronic CO.,Ltd
  • Origin: Shenzhen
  • Product Series: BTA/BTB16 Series
  • TRIAC Type: 3 Quadrants, 4 Quadrants
  • Trademark: KY logo (registered)

Technical Specifications

Parameter Conditions BTA16/BTB16-600 BTA16/BTB16-800 Unit
Repetitive Peak Off-State Voltage (VDRM/VRRM) 800 1000 V
R.M.S On-State Current (IT(RMS)) Tc=110C 16 16 A
Surge On-State Current (ITSM) 170/180 170/180 A
It for fusing Tp=10ms 116 116 As
Average Gate Power Dissipation (PG(AV)) Tj=125C 1 1 W
Peak Gate Current (IGM) Tj=125C, tp=20us 4 4 A
Operating Junction Temperature (Tj) -40~125 -40~125 C
Storage Temperature (TSTG) -40~150 -40~150 C
Parameter Test Conditions Value Unit
Repetitive Peak Off-State Current (IDRM) Tj=25C 5 uA
Repetitive Peak Off-State Current (IDRM) Tc=125C 1 mA
Repetitive Peak Reverse Current (IRRM) Tc=25C 5 uA
Repetitive Peak Reverse Current (IRRM) Tc=125C 1 mA
Forward "on" voltage (VTM) IT=23A, tp=380us 1.5 V
Gate trigger voltage (VGT) VD=12V, RL=30 1.5 V
Critical rate of rise of on-state current (di/dt) I,II,III F=100Hz, IG=2xIGT, tr100ns 50 A/us
Critical rate of rise of on-state current (di/dt) IV F=100Hz, IG=2xIGT, tr100ns 10 A/us
Gate trigger current (IGT) I,II,III VD=12V, RL=30 10, 25, 50 mA
Gate trigger current (IGT) IV VD=12V, RL=30 25, 50 mA
Gate trigger current (IGT) / VD=12V, RL=30 50, 100 mA
Holding current (IH) IT=0.2A 25, 35, 50 mA
Holding current (IH) IT=0.2A 25, 50 mA
Gate non-trigger voltage (VGD) VD=VDRM, TJ=125C,RL=3.3K 0.2 V
Critical-rate of rise of commutation voltage (dv/dt) TJ=125C, VD=2/3VDRM, Gate 100, 400, 1000, 200, 400 V/us

2410121313_KY-BTA16-800B_C2831701.pdf

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