P Channel Enhancement Mode MOSFET KUU KM3139K with Halogen Free Lead Free Construction and Low Threshold Voltage
Key Attributes
Model Number:
KM3139K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
510mΩ@4.5V,0.5A
Gate Threshold Voltage (Vgs(th)):
800mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF@16V
Number:
1 P-Channel
Input Capacitance(Ciss):
113pF@16V
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
1.24nC@4.5V
Mfr. Part #:
KM3139K
Package:
SOT-723
Product Description
Product Overview
This P-Channel Enhancement Mode MOSFET features advanced trench process technology, low threshold voltage, and fast switching speed. It is halogen-free, lead-free, and ESD protected up to 2KV (HBM). Ideal for load switching in portable devices and as a voltage-controlled small signal switch.
Product Attributes
- Brand: KM3139K
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -20 | V | (at Ta = 25unless otherwise specified) | ||
| Gate-Source Voltage | VGS | 12 | V | (at Ta = 25unless otherwise specified) | ||
| Continuous Drain Current | ID | -0.66 | A | (at Ta = 25unless otherwise specified) | ||
| Peak Drain Current, Pulsed | IDM | -1.2 | A | 1) Pulse width 100us, duty cycle 1%, limited by Tjmax | ||
| Power Dissipation | Ptot | 0.15 | W | 2) Device mounted on FR-4 substrate PC board, 2ozcopper, with 1-inch square copper plate in still air. | ||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance from Junction to Ambient | RJA | 833 | /W | 2) Device mounted on FR-4 substrate PC board, 2ozcopper, with 1-inch square copper plate in still air. | ||
| Static Parameters | ||||||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | at ID = -250 A | ||
| Drain-Source Leakage Current | IDSS | -1 | A | at VDS = -20 V | ||
| Gate Leakage Current | IGSS | 10 | A | at VGS = 10 V | ||
| Gate-Source Threshold Voltage | VGS(th) | -0.35 | -0.8 | V | at VDS = VGS, ID =- 250 A | |
| Drain-Source On-State Resistance | RDS(on) | 350 | 510 | m | at VGS = -4.5 V, ID = -0.5A | |
| Drain-Source On-State Resistance | RDS(on) | 480 | 775 | m | at VGS = -2.5 V, ID = -0.5 A | |
| Dynamic Parameters | ||||||
| Forward Transconductance | gfs | 1.2 | S | at VDS = -10 V, ID = -0.54 A | ||
| Input Capacitance | Ciss | 113 | pF | at VGS = 0 V, VDS = -16V, f = 1 MHz | ||
| Output Capacitance | Coss | 15 | pF | at VGS = 0 V, VDS = -16 V, f = 1 MHz | ||
| Reverse Transfer Capacitance | Crss | 9 | pF | at VGS = 0 V, VDS =- 16V, f = 1 MHz | ||
| Gate charge total | Qg | 1.24 | nC | at VDS = - 10 V, ID = - 0.65 A, VGS = - 4.5 V | ||
| Gate to Source Charge | Qgs | 0.37 | nC | at VDS = - 10 V, ID = - 0.65 A, VGS = - 4.5 V | ||
| Gate to Drain Charge | Qgd | 0.27 | nC | at VDS = - 10 V, ID = - 0.65 A, VGS = - 4.5 V | ||
| Turn-On Delay Time | td(on) | 9.0 | ns | at VGS = -4.5V, VDS = -10 V, ID = -0.2 A, RGEN= 10 | ||
| Turn-On Rise Time | tr | 5.8 | ns | at VGS = -4.5V, VDS = -10 V, ID = -0.2 A, RGEN= 10 | ||
| Turn-Off Delay Time | td(off) | 32.7 | ns | at VGS = -4.5V, VDS = -10 V, ID = -0.2 A, RGEN= 10 | ||
| Turn-Off Fall Time | tf | 20.3 | ns | at VGS = -4.5V, VDS = -10 V, ID = -0.2 A, RGEN= 10 | ||
| Body-Diode Parameters | ||||||
| Drain-Source Diode Forward Voltage | VSD | -1.2 | V | at IS = -0.5 A, VGS = 0 V | ||
| Body Diode Reverse Recovery Time | trr | 10.2 | ns | at IF = -1.25 A, di/dt = 100 A / s | ||
| Body Diode Reverse Recovery Charge | Qrr | 3.5 | nC | at IF =-1.25A, di/dt = 100 A / s | ||
2410121245_KUU-KM3139K_C5438457.pdf
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