Power MOSFET KUU 4410 featuring low RDS ON and low gate charge for portable equipment power solutions
Key Attributes
Model Number:
4410
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
117.7pF
Number:
1 N-channel
Output Capacitance(Coss):
128.9pF
Input Capacitance(Ciss):
1.007nF
Pd - Power Dissipation:
35W
Gate Charge(Qg):
23.1nC@10V
Mfr. Part #:
4410
Package:
SOP-8
Product Description
Product Overview
The 4410 is an N-channel enhancement mode power MOSFET featuring advanced high cell density Trench technology and a low resistance package, resulting in extremely low RDS(ON). This design minimizes conductive loss and offers fast switching due to low gate charge. It is ideal for load switch and battery protection applications, particularly in power management for notebook computers, portable equipment, and battery-powered systems.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID@TC=25 | 15 | A | |||
| Continuous Drain Current | ID@TC=75 | 11 | A | |||
| Continuous Drain Current | ID@TC=100 | 9.0 | A | |||
| Pulsed Drain Current | IDM | 45 | A | |||
| Total Power Dissipation | PD@TC=25 | 35 | W | |||
| Total Power Dissipation | PD@TA=25 | 0.8 | W | |||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature | TSTG | -55 | 150 | |||
| Single Pulse Avalanche Energy | EAS | 35 | mJ | |||
| Thermal Resistance | ||||||
| Thermal resistance, junction - case | RthJC | 4.5 | C/W | |||
| Thermal resistance, junction - ambient | RthJA | 60 | C/W | |||
| Soldering temperature, wavesoldering for 8 s | Tsold | 265 | C | |||
| Electronic Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS =0V,ID =250uA | 30 | V | ||
| Gate Threshold Voltage | VGS(TH) | VGS =V DS, ID =250uA | 1.2 | 2.5 | V | |
| Drain-Source Leakage Current | IDSS | VDS=30 VGS =0V | 1.0 | uA | ||
| Gate- Source Leakage Current | IGSS | VGS=20V ,VDS =0V | 100 | nA | ||
| Static Drain-source On Resistance | RDS(ON) | VGS=10V, ID=15A | 8.3 | 10 | m | |
| Static Drain-source On Resistance | RDS(ON) | VGS=4.5V, ID=10A | 10 | m | ||
| Forward Transconductance | gFS | VDS =25V, ID=10A | 8 | S | ||
| Source-drain voltage | VSD | Is=10A | 1.20 | V | ||
| Capacitance | ||||||
| Input capacitance | Ciss | f = 1MHz VDS=15V VGS=0V | 1007 | pF | ||
| Output capacitance | Coss | f = 1MHz VDS=15V VGS=0V | 128.9 | pF | ||
| Reverse transfer capacitance | Crss | f = 1MHz VDS=15V VGS=0V | 117.7 | pF | ||
| Gate Charge Characteristics | ||||||
| Total gate charge | Qg | VDD = 15V ID = 10A VGS = 10V | 23.1 | nC | ||
| Gate - Source charge | Qgs | VDD = 15V ID = 10A VGS = 10V | 4.28 | nC | ||
| Gate - Drain charge | Qgd | VDD = 15V ID = 10A VGS = 10V | 4.32 | nC | ||
2410121653_KUU-4410_C2922757.pdf
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