SOT23 TrenchFET Power MOSFET KUU KSI2301CDS-T1-GE3 Featuring Low On Resistance and Fast Switching
Key Attributes
Model Number:
KSI2301CDS-T1-GE3
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-
RDS(on):
110mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 P-Channel
Output Capacitance(Coss):
75pF
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
405pF
Gate Charge(Qg):
12nC@2.5V
Mfr. Part #:
KSI2301CDS-T1-GE3
Package:
SOT-23
Product Description
Product Overview
This document details the SOT-23 Plastic-Encapsulated TrenchFET Power MOSFET, designed for efficient power management applications. It offers high performance with features like low on-resistance and fast switching speeds, making it suitable for various electronic circuits.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Plastic-Encapsulated
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | MIN | TYP | MAX | Units |
| Maximum Ratings | VDS | Drain-Source voltage | -20 | V | ||
| VGS | Gate-Source voltage | 12 | V | |||
| ID | Drain current | -3 | A | |||
| PD | Power Dissipation | TA=25 | 1 | W | ||
| Tj | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | 150 | |||
| Electrical Characteristics | V(BR)DSS | VGS=0V,ID=-250uA | -20 | V | ||
| Vth(GS) | VDS= VGS, ID=-250 uA | -0.4 | -0.7 | -1 | V | |
| IGSS | VDS=0V, VGS=12V | 100 | nA | |||
| IDSS | VDS=-20V, VGS=0V | -1 | uA | |||
| rDS(ON) | VGS=-4.5V, ID=-3A | 64 | 110 | m | ||
| VGS=-2.5V, ID=-2A | 89 | 140 | m | |||
| gfs | VDS=-5V, ID=-2.8A | 9.5 | s | |||
| Capacitance | Ciss | VDS=-10V, VGS=0V, f=1MHz | 405 | pF | ||
| Coss | 75 | pF | ||||
| Crss | 55 | pF | ||||
| Switching Capacitance | td(on) | VDD=-10V, ID=-1A, VGS=-4.5V RGEN=10 | 11 | nS | ||
| tr | 35 | nS | ||||
| td(off) | 30 | nS | ||||
| tf | 10 | nS | ||||
| Total Gate Charge | Qg | VDS=-10V, ID=-3A, VGS=-2.5V | 3.3 | 12 | nC | |
| Qgs | 0.7 | nC | ||||
| Qgd | 1.3 | nC | ||||
| Drain-Source Diode Characteristics | VSD | VGS=0V, ID=-1.3A | -1.2 | V | ||
| Is | -1.3 | A |
2512301752_KUU-KSI2301CDS-T1-GE3_C2891843.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
