P Channel MOSFET KUU SI2301 for PWM Applications Load Switching and Power Management Solutions
Key Attributes
Model Number:
SI2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
RDS(on):
115mΩ@2.5V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
68pF
Number:
1 P-Channel
Output Capacitance(Coss):
92pF
Input Capacitance(Ciss):
589pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
SI2301
Package:
SOT-23-3L
Product Description
Product Overview
This P-Channel MOSFET is designed for PWM applications, load switching, and power management. Its key features include high efficiency and suitability for various power control scenarios.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Maximum Ratings | VDS | Drain-Source voltage | -20 | V | ||
| VGS | Gate-Source voltage | 12 | V | |||
| ID | Drain current | -3 | A | |||
| PD | Power Dissipation | (TA=25) | 1 | W | ||
| Tj | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | 150 | |||
| MARK | A1sHB | |||||
| Electrical Characteristics | V(BR)DSS | Drain-Source Breakdown Voltage (VGS=0V,ID=-250uA) | -20 | V | ||
| Vth(GS) | Gate-Threshold Voltage (VDS= VGS, ID=-250 uA) | -0.4 | -0.65 | -1 | V | |
| IGSS | Gate-body Leakage (VDS=0V, VGS=12V) | 100 | nA | |||
| IDSS | Zero Gate Voltage Drain Current (VDS=-19V, VGS=0V) | -1 | uA | |||
| rDS(ON) | Drain-Source On-Resistance (VGS=-4.5V, ID=-3.0A) | 50 | 60 | m | ||
| Drain-Source On-Resistance (VGS=-2.5V, ID=-2.0A) | 65 | 75 | m | |||
| gfs | Forward Transconductance (VDS=-5V, ID=-1.0A) | 6 | s | |||
| Dynamic Characteristics | Ciss | Input Capacitance (VDS=-10V, VGS=0V, f=1MHz) | 405 | pF | ||
| Coss | Output Capacitance | 112 | pF | |||
| Crss | Reverse Transfer Capacitance | 89 | pF | |||
| Switching Characteristics | td(on) | Turn-on Delay Time (VDD=-10V, RL=2.9 , VGS=-4.5V RGEN=10) | 11 | nS | ||
| tr | Turn-on Rise Time | 35 | nS | |||
| td(off) | Turn-off Delay Time | 30 | nS | |||
| tf | Turn-off Fall Time | 10 | nS | |||
| Total Gate Charge | Qg | Total Gate Charge (VDS=-10V, ID=-2.5A, VGS=-4.5V) | 9.0 | nC | ||
| Qgs | Gate-Source Charge | 1.0 | nC | |||
| Qgd | Gate-Drain Charge | 2.5 | nC | |||
| Drain-Source Diode Characteristics | VSD | Diode Forward Voltage (VGS=0V, ID=-3A) | -1.2 | V | ||
| Is | Diode Forward Current | -3.0 | A | |||
| Package Dimensions (SI2301) | Symbol | UNIT(mm) | MIN | TYP | MAX | |
| A | 0.90 | 1.15 | ||||
| A1 | 0.01 | 0.15 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | 0.95 | |||||
| e1 | 1.80 | 2.00 | ||||
| L | 0.30 | 0.50 | 0.50 | |||
| L1 | 0.50 | 0.55 | 0.60 | |||
| 0 | 8 |
2512301750_KUU-SI2301_C2985938.pdf
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