Electronic switching transistor KUU SI2305F P channel MOSFET designed for power control in circuits
Key Attributes
Model Number:
SI2305F
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
5.5A
Operating Temperature -:
-
RDS(on):
29mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
109pF
Number:
1 P-Channel
Output Capacitance(Coss):
135pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
1.01nF
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
SI2305F
Package:
SOT-89
Product Description
Product Overview
The SI2305F is a P-channel enhancement mode MOS Field Effect Transistor designed for various electronic applications. It offers robust performance with specified voltage and current ratings, making it suitable for power switching and control circuits.
Product Attributes
- Product Name: SI2305F
- Package Type: SOT-89
- Product Marking: SI2305F=A5
- Origin: Datasheet from www.yongyutai.com
- Revision: -2.0
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Conditions |
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | ID = -250uA,VGS=0V | ||
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.62 | -1 | V | ID = -250uA,VGS= VDS |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VGS=0V, VDS= -20V | ||
| Gate Body Leakage | IGSS | +100 | nA | VGS=+10V, VDS=0V | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 29 | 35 | m | ID= -5A,VGS= -4.5V | |
| 42 | 55 | ID= -4A,VGS= -2.5V | ||||
| 75 | ID= -3A,VGS= -1.8V | |||||
| Diode Forward Voltage Drop | VSD | -1.2 | V | ISD= -5A,VGS=0V | ||
| Input Capacitance | CISS | 1010 | pF | VGS=0V, VDS= -10V,f=1MHz | ||
| Common Source Output Capacitance | COSS | 135 | pF | VGS=0V, VDS= -10V,f=1MHz | ||
| Reverse Transfer Capacitance | CRSS | 109 | pF | VGS=0V, VDS= -10V,f=1MHz | ||
| Total Gate Charge | Qg | 11 | nC | VDS= -10V, ID= -4A, VGS= -4.5V | ||
| Gate Source Charge | Qgs | 2 | nC | VDS= -10V, ID= -4A, VGS= -4.5V | ||
| Gate Drain Charge | Qgd | 2 | nC | VDS= -10V, ID= -4A, VGS= -4.5V | ||
| Turn-ON Delay Time | td(on) | 8 | ns | VDS= -10V ID= -1A, RGEN=2.5,VGS= -4.5V | ||
| Turn-ON Rise Time | tr | 36 | ns | VDS= -10V ID= -1A, RGEN=2.5,VGS= -4.5V | ||
| Turn-OFF Delay Time | td(off) | 78 | ns | VDS= -10V ID= -1A, RGEN=2.5,VGS= -4.5V | ||
| Turn-OFF Fall Time | tf | 55 | ns | VDS= -10V ID= -1A, RGEN=2.5,VGS= -4.5V |
Absolute Maximum Ratings
| Characteristic | Symbol | Rating | Unit |
| Drain-Source Voltage | BVDSS | -20 | V |
| Gate- Source Voltage | VGS | +10 | V |
| Drain Current (continuous) | IDat TA = 25C | -5.5 | A |
| Drain Current (pulsed) | IDM | -23 | A |
| Total Device Dissipation | PD(at TA = 25C) | 1200 | mW |
| Thermal Resistance Junction-Ambient | RJA | 105 | /W |
| Junction/Storage Temperature | TJ,Tstg | -55~150 |
2411191355_KUU-SI2305F_C42387174.pdf
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