Low gate charge P Channel MOSFET LGE AO3415 offering excellent RDS ON and suitable for load switching
Key Attributes
Model Number:
AO3415
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
RDS(on):
41mΩ@4.5V,4A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
300mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
115pF
Number:
1 P-Channel
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
905pF
Gate Charge(Qg):
7.4nC
Mfr. Part #:
AO3415
Package:
SOT-23
Product Description
Product Overview
The AO3415 is a P-Channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 1.8V. This device is well-suited for load switch applications.
Product Attributes
- Brand: LGE Semiconductor
- Package: SOT-23
- Model: AO3415
- Contact: lge@lgesemi.com
- Website: http://www.lgesemi.com
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | VDS | TA=25C | -20 | V | ||
| VGS | TA=25C | ±8 | V | |||
| ID | TA=25C | -4 | A | |||
| ID | TA=70C | -3.5 | A | |||
| Pulsed Drain Current | IDM | TA=25C | -30 | A | ||
| Power Dissipation | PD | TA=25C | 1.5 | W | ||
| PD | TA=70C | 1 | W | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | ||
| Thermal Characteristics | RθJA | t ≤10s | 65 | 80 | °C/W | |
| RθJA | Steady-State | 85 | 100 | °C/W | ||
| RθJL | Steady-State | 43 | 52 | °C/W | ||
| Drain-Source Breakdown Voltage | BVDSS | ID=-250 µA, VGS=0V | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | µA | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=±8V | ±10 | µA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250 µA | -0.3 | -0.57 | -0.9 | V |
| On state drain current | ID(ON) | VGS=-4.5V, VDS=-5V | -30 | A | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-4A | 34 | 41 | mΩ | |
| TJ=125°C, VGS=-4.5V, ID=-4A | 49 | 59 | mΩ | |||
| VGS=-2.5V, ID=-4A | 42 | 53 | mΩ | |||
| VGS=-1.8V, ID=-2A | 52 | 65 | mΩ | |||
| Forward Transconductance | gFS | VDS=-5V, ID=-4A | 20 | S | ||
| Diode Forward Voltage | VSD | IS=-1A,VGS=0V | -0.64 | -1 | V | |
| Maximum Body-Diode Continuous Current | IS | -2 | A | |||
| Capacitance | Ciss | VGS=0V, VDS=-10V, f=1MHz | 600 | 905 | pF | |
| Coss | VGS=0V, VDS=-10V, f=1MHz | 80 | 150 | pF | ||
| Crss | VGS=0V, VDS=-10V, f=1MHz | 48 | 115 | pF | ||
| Gate resistance | Rg | 6 | 20 | Ω | ||
| Gate Charge | Qg | VGS=-4.5V, VDS=-10V, ID=-4A | 7.4 | 11 | nC | |
| Qgs | VGS=-4.5V, VDS=-10V, ID=-4A | 0.8 | 1.2 | nC | ||
| Qgd | VGS=-4.5V, VDS=-10V, ID=-4A | 1.3 | 3.1 | nC | ||
| Switching Parameters | tD(on) | VGS=-4.5V, VDS=-10V, RL=2.5 Ω, RGEN=3 Ω | 13 | ns | ||
| tr | VGS=-4.5V, VDS=-10V, RL=2.5 Ω, RGEN=3 Ω | 9 | ns | |||
| Switching Parameters | tD(off) | VGS=-4.5V, VDS=-10V, RL=2.5 Ω, RGEN=3 Ω | 19 | ns | ||
| tf | VGS=-4.5V, VDS=-10V, RL=2.5 Ω, RGEN=3 Ω | 29 | ns | |||
| Body Diode Characteristics | trr | IF=-4A, dI/dt=500A/µs | 20 | 32 | ns | |
| Qrr | IF=-4A, dI/dt=500A/µs | 40 | 62 | nC |
2411220032_LGE-AO3415_C5364322.pdf
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