triac KY BTB16-800BW offering 16 amp rms current and multiple packaging options for industrial ac control
Key Attributes
Model Number:
BTB16-800BW
Product Custom Attributes
Holding Current (Ih):
50mA
Current - Gate Trigger(Igt):
-
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
-
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BTB16-800BW
Package:
TO-220B
Product Description
BTA/BTB16 Series TRIACs
The BTA/BTB16 Series TRIACs from ShenZhenHanKingyuan Electronic CO.,Ltd are high-performance semiconductor devices designed for AC power control applications. Available in 3 and 4 quadrant configurations, these TRIACs offer robust performance with an RMS on-state current of 16A and repetitive peak off-state voltages up to 1000V. They are suitable for a wide range of applications including washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: ShenZhenHanKingyuan Electronic CO.,Ltd
- Product Series: BTA/BTB16 Series
- Type: TRIACs
- Quadrants: 3 Quadrants, 4 Quadrants
- Packaging Options: TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), TO-263, TO-220C (Non-Insulated)
Technical Specifications
| Parameter | Conditions | BTA16/BTB16-800 | BTA16/BTB16-1000 | Unit |
| Repetitive Peak Off-State Voltage (VDRM/VRRM) | 800 | 1000 | V | |
| R.M.S On-State Current (IT(RMS)) | Tc=110C | 16 | 16 | A |
| Surge On-State Current (ITSM) | Tp=10ms | 170/180 | 170/180 | A |
| It for fusing | Tp=10ms | 116 | 116 | As |
| Average Gate Power Dissipation (PG(AV)) | Tj=125C | 1 | 1 | W |
| Peak Gate Current (IGM) | tp=20us, Tj=125C | 4 | 4 | A |
| Operating Junction Temperature (Tj) | -40~125 | -40~125 | C | |
| Storage Temperature (TSTG) | -40~150 | -40~150 | C |
| Parameter | Test Conditions | Value | Unit |
| Repetitive Peak Off-State Current (IDRM) | Tj=25C | ≤5 | uA |
| Repetitive Peak Off-State Current (IDRM) | Tc=125C | ≤1 | mA |
| Repetitive Peak Reverse Current (IRRM) | Tc=25C | ≤5 | uA |
| Repetitive Peak Reverse Current (IRRM) | Tc=125C | ≤1 | mA |
| Forward "on" voltage (VTM) | IT=23A, tp=380us | 1.5 | V |
| Gate trigger voltage (VGT) | VD=12V, RL=30Ω | ≤1.5 | V |
| Critical rate of rise of on-state current (di/dt) | I,II,III, F=100Hz, IG=2xIGT, tr≤100ns | ≥50 | A/us |
| Critical rate of rise of on-state current (di/dt) | IV, F=100Hz, IG=2xIGT, tr≤100ns | ≥10 | A/us |
| Gate trigger current (IGT) | I,II,III, VD=12V, RL=30Ω | ≤10 / ≤25 / ≤50 | mA |
| Gate trigger current (IGT) | IV, VD=12V, RL=30Ω | ≤25 / ≤50 | mA |
| Holding current (IH) | IT=0.2A | ≤25 / ≤35 / ≤50 | mA |
| Holding current (IH) | IT=0.2A | ≤25 / ≤50 | mA |
| Gate non-trigger voltage (VGD) | VD=VDRM, TJ=125°C, RL=3.3K | ≥0.2 | V |
| Critical-rate of rise of commutation voltage (dv/dt) | TJ=125°C, VD=2/3VDRM, Gate | ≥100 / ≥400 / ≥1000 | V/us |
| Critical-rate of rise of commutation voltage (dv/dt) | TJ=125°C, VD=2/3VDRM, Gate | ≥200 / ≥400 | V/us |
2511102004_KY-BTB16-800BW_C5366741.pdf
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