Lingxingic 2SC3356 LX Silicon Bipolar Transistor Designed for Microwave and RF Amplifier Circuits

Key Attributes
Model Number: 2SC3356(LX)
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
6.5GHz
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
12V
Mfr. Part #:
2SC3356(LX)
Package:
SOT-23
Product Description

Product Overview

The 3356 is a silicon-based microwave bipolar transistor primarily used in high-frequency electronic amplifier circuits. It offers a low noise figure and a high cutoff frequency, making it suitable for demanding RF applications.

Product Attributes

  • Brand: Lingxingic
  • Origin: Shenzhen Lingxing Microelectronics Technology Co., Ltd.
  • Material: Silicon-based
  • Package: SOT-23

Technical Specifications

ParameterSymbolRating UnitTest ConditionsCriterion UnitMinTypMax
Absolute Maximum Ratings (Unless otherwise specified, Ta= 25)
Collector-Base Voltage (Open Circuit)VCBO20V
Collector-Emitter Voltage (Open Circuit)VCEO12V
Emitter-Base Voltage (Open Circuit)VEBO3V
Collector CurrentIC100mA
Power DissipationPtot150mW
Junction TemperatureTj150
Storage TemperatureTstg-55150
Electrical Characteristics (Unless otherwise specified, Ta= 25)
Collector Cutoff CurrentICBOVCBO=20V,IE=0uA1.0
Emitter Cutoff CurrentIEBOVEBO=3.0V,IC=0uA1.0
DC Current GainHFEVCE=10V,IC=20mA130200300
Gain Bandwidth ProductfTVCE=10V,IC=20mAGHz6.5
Power GainS21VCE=10V,IC=20mA,f=1GHzdB8.59.5
Noise FigureNFVCE=10V,IC=10mA,f=1GHzdB1.12.0
HFE Binning Description:
HFE RangeBinMarking
130-160CR25
160-250DR25
250-300FR25
Ordering Information:
Product Part NumberPackage TypeMarkingReel QuantityBox QuantityRemarks
2SC3356(LX)SOT-23R253000PCS/Reel30000PCS/Box

2410281046_lingxingic-2SC3356-LX_C42370039.pdf

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