IXTQ69N30P N Channel Enhancement Mode MOSFET Designed for High Current and Fast Switching Performance
Key Attributes
Model Number:
IXTQ69N30P
Product Custom Attributes
Drain To Source Voltage:
300V
Current - Continuous Drain(Id):
69A
Operating Temperature -:
-55℃~+150℃
RDS(on):
49mΩ
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
190pF
Output Capacitance(Coss):
760pF
Input Capacitance(Ciss):
4.96nF@10V
Pd - Power Dissipation:
500W
Gate Charge(Qg):
180nC@10V
Mfr. Part #:
IXTQ69N30P
Package:
TO-3P
Product Description
Product Overview
The IXTQ69N30P and IXTT69N30P are N-Channel Enhancement Mode PolarTM Power MOSFETs from IXYS, offering high power density, easy mounting, and space savings. They are designed for high-speed power switching applications and feature fast intrinsic diodes, avalanche rating, low RDS(ON), low QG, and low package inductance.
Product Attributes
- Brand: IXYS
- Origin: USA (implied by US patents)
- Certifications: Covered by multiple US patents (listed in source)
- Material: Not specified
- Color: Not specified
Technical Specifications
| Symbol | Test Conditions | Min. | Typ. | Max. | Units | IXTQ69N30P / IXTT69N30P |
| Maximum Ratings | ||||||
| VDSS | TJ = 25C to 150C | 300 | V | |||
| VDGR | TJ = 25C to 150C, RGS = 1M | 300 | V | |||
| VGSS Continuous | 20 | V | ||||
| VGSM Transient | 30 | V | ||||
| ID25 | TC = 25C | 69 | A | |||
| IDM | TC = 25C, Pulse Width Limited by TJM | 200 | A | |||
| IA | TC = 25C | 69 | A | |||
| EAS | TC = 25C | 1.5 | J | |||
| dv/dt | IS < IDM, VDD < VDSS, TJ < 150C | 15 | V/ns | |||
| PD | TC = 25C | 500 | W | |||
| TJ | -55 | +150 | C | |||
| TJM | +150 | C | ||||
| Tstg | -55 | +150 | C | |||
| TL | 1.6mm (0.063in) from Case for 10s | 300 | C | |||
| TSOLD | Plastic Body for 10s | 260 | C | |||
| Md | Mounting Torque (TO-3P) | 1.13/10 | Nm/lb.in. | |||
| Weight | TO-268 | 4.0 | g | |||
| Weight | TO-3P | 5.5 | g | |||
| Characteristic Values (TJ = 25C, Unless Otherwise Specified) | ||||||
| BVDSS | VGS = 0V, ID = 250A | 300 | V | |||
| VGS(th) | VDS = VGS, ID = 250A | 2.5 | 5.0 | V | ||
| IGSS | VGS = 20V, VDS = 0V | 100 | nA | |||
| IDSS | VDS = VDSS, VGS = 0V | 5 | A | TJ = 125C: 100 A | ||
| RDS(on) | VGS = 10V, ID = 0.5 ID25, Note 1 | 49 | m | |||
| gfs | VDS = 10V, ID = 0.5 ID25, Note 1 | 30 | 48 | S | ||
| Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 4960 | pF | |||
| Coss | 760 | pF | ||||
| Crss | 190 | pF | ||||
| Resistive Switching Times | ||||||
| td(on) | VGS = 10V, VDS = 0.5 VDSS, ID = ID25, RG = 4 (External) | 25 | ns | |||
| tr | 25 | ns | ||||
| td(off) | 75 | ns | ||||
| tf | 27 | ns | ||||
| Qg(on) | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 156 | 180 | nC | ||
| Qgs | 32 | nC | ||||
| Qgd | 79 | nC | ||||
| RthJC | 0.25 | C/W | ||||
| RthCS | TO-3P | 0.21 | C/W | |||
| Source-Drain Diode | ||||||
| IS | VGS = 0V | 69 | A | |||
| ISM | Repetitive, Pulse Width Limited by TJM | 270 | A | |||
| VSD | IF = IS, VGS = 0V, Note 1 | 1.5 | V | |||
| trr | IF = 25A, -di/dt = 100A/s, VR = 100V, VGS = 0V | 330 | ns | |||
| QRM | 4.13 | C | ||||
2407311403_Littelfuse-IXTQ69N30P_C27756225.pdf
Related Products
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
