High Voltage Switching Littelfuse NGB8207ABNT4G Logic Level IGBT with Integrated Protection Features
Key Attributes
Model Number:
NGB8207ABNT4G
Product Custom Attributes
Pd - Power Dissipation:
165W
Td(off):
-
Td(on):
-
Collector-Emitter Breakdown Voltage (Vces):
365V
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.2V@3.7V,10A
Operating Temperature:
-55℃~+175℃@(Tj)
Switching Energy(Eoff):
-
Turn-On Energy (Eon):
-
Mfr. Part #:
NGB8207ABNT4G
Package:
D2PAK
Product Description
Product Overview
The NGB8207ABN is a Logic Level Insulated Gate Bipolar Transistor (IGBT) designed for ignition and high voltage/high current switching applications. It features integrated ESD and over-voltage clamped protection, making it ideal for Coil-on-Plug and Driver-on-Coil applications. Its low threshold voltage allows for interfacing power loads to logic or microprocessor devices, while its low saturation voltage and high pulsed current capability ensure efficient operation. This Pb-free device offers gate-emitter ESD protection and temperature-compensated gate-collector voltage clamp limits to minimize stress on the load.
Product Attributes
- Brand: Littelfuse
- Product Type: Ignition IGBT Surface Mount
- Certifications: Pb-Free Devices
Technical Specifications
| Rating Symbol | Value | Unit | Description |
| VCES | 365 | V | CollectorEmitter Voltage |
| VGE | ±15 | V | GateEmitter Voltage |
| IC (Continuous @ TC = 25°C) | 20 | ADC | Collector CurrentContinuous |
| IC (Pulsed) | 50 | AAC | Collector CurrentPulsed |
| IG (Continuous) | 1.0 | mA | Continuous Gate Current |
| IG (Transient) | 20 | mA | Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) |
| ESD (ChargedDevice Model) | 2.0 | kV | ESD Protection |
| ESD (Human Body Model) | 8.0 | kV | ESD Protection |
| ESD (Machine Model) | 500 | V | ESD Protection |
| PD (@ TC = 25°C) | 165 | Watts | Total Power Dissipation |
| TJ, Tstg | −55 to +175 | °C | Operating and Storage Temperature Range |
| RθJC | 0.9 | °C/W | Thermal Resistance, Junction to Case |
| RθJA | 50 | °C/W | Thermal Resistance, Junction to Ambient |
| TL | 275 | °C | Maximum Lead Temperature for Soldering Purposes |
| EAS | 500 | mJ | Single Pulse CollectortoEmitter Avalanche Energy |
| EAS(R) | 2000 | mJ | Reverse Avalanche Energy |
| VCE(on) (≤ 1.5 V @ IC = 10A, VGE ≥ 4.5 V) | - | V | OnState Voltage |
| Characteristic | Symbol | Test Conditions | Temperature | Min | Typ | Max | Unit |
| CollectorEmitter Clamp Voltage | BVCES | IC = 2.0 mA | TJ = −40°C to 175°C | 325 | 350 | 375 | V |
| CollectorEmitter Clamp Voltage | BVCES | IC = 10 mA | TJ = −40°C to 175°C | 340 | 365 | 390 | V |
| Zero Gate Voltage Collector Current | ICES | VGE = 0 V, VCE = 24V | TJ = 25°C | - | 0.1 | 2.0 | µA |
| Zero Gate Voltage Collector Current | ICES | VCE = 250V | TJ = 25°C | - | 1.0 | 5 | µA |
| Zero Gate Voltage Collector Current | ICES | VCE = 250V | TJ = 175°C | - | 70 | 85 | µA |
| Reverse CollectorEmitter Clamp Voltage | BVCES (R) | IC = −75 mA | TJ = 25°C | 30 | 33 | 39 | V |
| Reverse CollectorEmitter Clamp Voltage | BVCES (R) | IC = −75 mA | TJ = 175°C | 30 | 36 | 42 | V |
| Reverse CollectorEmitter Leakage Current | ICES(R) | VCE = −24 V | TJ = 25°C | 0.10 | 0.25 | 0.85 | mA |
| Reverse CollectorEmitter Leakage Current | ICES(R) | VCE = −24 V | TJ = 175°C | 20 | 25 | 40 | mA |
| GateEmitter Clamp Voltage | BVGES | IG = ± 5.0 mA | TJ = −40°C to 175°C | 12 | 13 | 14.5 | V |
| GateEmitter Leakage Current | IGES | VGE = ± 10.0 V | TJ = −40°C to 175°C | 500 | 700 | 1000 | µA |
| Gate Resistor | RG | - | TJ = −40°C to 175°C | - | 70 | - | Ω |
| Gate Emitter Resistor | RGE | - | TJ = −40°C to 175°C | 14.25 | 16 | 25 | kΩ |
| Gate Threshold Voltage | VGE (th) | IC = 1.0 mA, VGE = VCE | TJ = 25°C | 1.2 | 1.5 | 2.0 | V |
| Gate Threshold Voltage | VGE (th) | IC = 1.0 mA, VGE = VCE | TJ = 175°C | 0.6 | 0.8 | 1.2 | V |
| CollectortoEmitter OnVoltage | VGE (on) | IC = 6.0 mA, VGE = 4.0 V | TJ = 25°C | 1.0 | 1.3 | 1.6 | V |
| CollectortoEmitter OnVoltage | VGE (on) | IC = 10 mA, VGE = 4.5 V | TJ = 25°C | - | 0.62 | 1.0 | V |
| CollectortoEmitter OnVoltage | VCE (on) | IC = 8.0 A, VGE = 4.0 V | TJ = 25°C | 1.1 | 1.5 | 1.7 | V |
| CollectortoEmitter OnVoltage | VCE (on) | IC = 10 A, VGE = 3.7 V | TJ = 25°C | 1.2 | 1.6 | 1.9 | V |
| CollectortoEmitter OnVoltage | VCE (on) | IC = 10 A, VGE = 4.0 V | TJ = 25°C | 1.1 | 1.5 | 1.85 | V |
| CollectortoEmitter OnVoltage | VCE (on) | IC = 10 A, VGE = 4.5 V | TJ = 25°C | 1.2 | 1.5 | 1.8 | V |
| CollectortoEmitter OnVoltage | VCE (on) | IC = 15 A, VGE = 4.0 V | TJ = 25°C | 1.45 | 1.85 | 2.15 | V |
| CollectortoEmitter OnVoltage | VCE (on) | IC = 20 A, VGE = 4.0V | TJ = 25°C | 1.6 | 2.1 | 2.6 | V |
| Forward Transconductance | gfs | VCE = 5.0 V, IC = 6.0 A | TJ = 25°C | - | 15.8 | - | Mhos |
| Characteristic | Symbol | Test Conditions | Temperature | Min | Typ | Max | Unit |
| Input Capacitance | CISS | VCE = 25 V f = 10 kHz | TJ = 25°C | 750 | 810 | 900 | pF |
| Output Capacitance | COSS | VCE = 25 V f = 10 kHz | TJ = 25°C | 75 | 90 | 105 | pF |
| Transfer Capacitance | CRSS | VCE = 25 V f = 10 kHz | TJ = 25°C | 4 | 7 | 12 | pF |
| TurnOn Delay Time (Resistive) Low Voltage | td (on) | VCE = 14 V RL = 1.0 Ω VGE = 5.0 V RG = 1000 Ω | TJ = 25°C | 0.5 | 0.55 | 0.7 | µSec |
| Rise Time (Resistive) Low Voltage | tr | VCE = 14 V RL = 1.0 Ω VGE = 5.0 V RG = 1000 Ω | TJ = 25°C | 2.0 | 2.32 | 2.7 | µSec |
| TurnOff Delay Time (Resistive) Low Voltage | td (off) | VCE = 14 V RL = 1.0 Ω VGE = 5.0 V RG = 1000 Ω | TJ = 25°C | 2.0 | 2.5 | 3.0 | µSec |
| Fall Time (Resistive) Low Voltage | tf | VCE = 14 V RL = 1.0 Ω VGE = 5.0 V RG = 1000 Ω | TJ = 25°C | 8.0 | 10 | 13 | µSec |
| TurnOn Delay Time (Resistive) High Voltage | td (on) | VCE = 300 V RL = 46 Ω VGE = 5.0 V RG = 1000 Ω | TJ = 25°C | 0.5 | 0.65 | 0.75 | µSec |
| Rise Time (Resistive) High Voltage | tr | VCE = 300 V RL = 46 Ω VGE = 5.0 V RG = 1000 Ω | TJ = 25°C | 0.7 | 1.8 | 2.0 | µSec |
| TurnOff Delay Time (Resistive) High Voltage | td (off) | VCE = 300 V RL = 46 Ω VGE = 5.0 V RG = 1000 Ω | TJ = 25°C | 4.0 | 4.7 | 6.0 | µSec |
| Fall Time (Resistive) High Voltage | tf | VCE = 300 V RL = 46 Ω VGE = 5.0 V RG = 1000 Ω | TJ = 25°C | 6.0 | 10 | 15 | µSec |
2411200001_Littelfuse-NGB8207ABNT4G_C17602148.pdf
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