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quality High voltage BiMOSFET transistor Littelfuse IXBK55N300 with ease of mounting and space saving features factory
quality High voltage BiMOSFET transistor Littelfuse IXBK55N300 with ease of mounting and space saving features factory
quality High voltage BiMOSFET transistor Littelfuse IXBK55N300 with ease of mounting and space saving features factory
quality High voltage BiMOSFET transistor Littelfuse IXBK55N300 with ease of mounting and space saving features factory

High voltage BiMOSFET transistor Littelfuse IXBK55N300 with ease of mounting and space saving features

Key Attributes
Model Number: IXBK55N300
Product Custom Attributes
Mfr. Part #:
IXBK55N300
Package:
TO-264AA
Product Description

Littelfuse BiMOSFETTM Monolithic Bipolar MOS Transistor

The IXBK55N300 and IXBX55N300 are high voltage, high gain BiMOSFETTM monolithic bipolar MOS transistors designed for applications requiring high blocking voltage and high current handling capability. They offer low conduction losses and MOS gate turn-on for drive simplicity. Key advantages include ease of mounting, space savings, and high power density. These transistors are suitable for Uninterruptible Power Supplies (UPS), Switch-Mode and Resonant-Mode Power Supplies, Capacitor Discharge Circuits, and Laser Generators.

Product Attributes

  • Brand: Littelfuse
  • Product Line: BiMOSFETTM
  • Origin: USA (implied by US patents)

Technical Specifications

Symbol Test Conditions IXBK55N300 / IXBX55N300 Unit
Maximum Ratings
VCES TJ = 25C to 150C 3000 V
VCGR TJ = 25C to 150C, RGE = 1M 3000 V
VGES (Continuous) 25 V
VGES (Transient) 35 V
IC25 TC = 25C (Chip Capability) 130 A
IC110 TC = 110C 55 A
ICM TC = 25C, 1ms 600 A
SSOA VGE= 15V, TVJ = 125C, RG = 2, ICM = 110 A (RBSOA) Clamped Inductive Load 1500 V
PC TC = 25C 625 W
TJ -55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TL (Max Lead Temp for Soldering) 1.6 mm (0.062 in.) from Case for 10s 300 C
Mounting Torque (TO-264) 1.13/10 Nm/lb.in
Mounting Force (PLUS247) 20..120/4.5..27 N/lb
Weight (TO-264) 10 g
Weight (PLUS247) 6 g
Characteristic Values (TJ = 25C, Unless Otherwise Specified)
BVCES IC = 1mA, VGE = 0V 3000 V
VGE(th) IC = 4mA, VCE = VGE 3.0 / 5.0 V
ICES VCE = VCES, VGE = 0V 50 A / 3 mA (TJ=125C)
IGES VCE = 0V, VGE = 25V 200 nA
VCE(sat) IC = 55A, VGE = 15V, Note 1 2.7 / 3.2 V (3.3 V at TJ=125C)
gfS IC = 55A, VCE = 10V, Note 1 32 / 50 S
Cies VCE = 25V, VGE = 0V, f = 1MHz 7300 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 275 pF
Cres VCE = 25V, VGE = 0V, f = 1MHz 83 pF
Qg IC = 55A, VGE = 15V, VCE = 1000V 335 nC
Qge IC = 55A, VGE = 15V, VCE = 1000V 47 nC
Qgc IC = 55A, VGE = 15V, VCE = 1000V 130 nC
Resistive Switching Times, TJ = 25C
td(on) IC = 110A, VGE = 15V, VCE = 1250V, RG = 2 52 ns
tr IC = 110A, VGE = 15V, VCE = 1250V, RG = 2 585 ns
td(off) IC = 110A, VGE = 15V, VCE = 1250V, RG = 2 215 ns
tf IC = 110A, VGE = 15V, VCE = 1250V, RG = 2 260 ns
Resistive Switching Times, TJ = 125C
td(on) IC = 110A, VGE = 15V, VCE = 1250V, RG = 2 54 ns
tr IC = 110A, VGE = 15V, VCE = 1250V, RG = 2 307 ns
td(off) IC = 110A, VGE = 15V, VCE = 1250V, RG = 2 230 ns
tf IC = 110A, VGE = 15V, VCE = 1250V, RG = 2 268 ns
RthJC 0.20 C/W
RthCS 0.15 C/W
Reverse Diode Characteristic Values (TJ = 25C Unless Otherwise Specified)
VF IF = 55A, VGE = 0V, Note 1 2.5 V
trr IF = 28A, VGE = 0V, -diF/dt = 100A/s 1.9 s
IRM VR = 100V, VGE = 0V 54 A

2411200143_Littelfuse-IXBK55N300_C7290885.pdf

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