Leiditech STR2P3LLH6 P Channel MOSFET Offering Low Gate Charge and Trench Technology for PWM Control
Key Attributes
Model Number:
STR2P3LLH6
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
RDS(on):
90mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
55pF@15V
Input Capacitance(Ciss):
640pF@15V
Pd - Power Dissipation:
2.1W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
STR2P3LLH6
Package:
SOT-23
Product Description
Product Overview
The STR2P3LLH6 is a P-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 2.5V. This device is ideally suited for use as a load switch or in Pulse Width Modulation (PWM) applications.
Product Attributes
- Brand: Leiditech
- Package Type: SOT23
- Technology: Trench Technology
- Channel Type: P-Channel
- Mode: Enhancement Mode
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Description | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Drain Current (Continuous) | ID | TC=25C, VGS=-10V | -5.0 | A | ||
| RDS(ON) (Max) | RDS(ON) | VGS=-10V | 50 | m | ||
| RDS(ON) (Max) | RDS(ON) | VGS=-4.5V | 65 | m | ||
| RDS(ON) (Max) | RDS(ON) | VGS=-2.5V | 90 | m | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TA=25C | -30 | V | ||
| Gate-Source Voltage | VGS | TA=25C | 12 | V | ||
| Drain Current-Continuous | ID | TC=25C | -5.0 | A | ||
| Drain Current-Continuous | ID | TC=100C | -3.5 | A | ||
| Drain Current Pulsed | IDM | -20 | A | |||
| Maximum Power Dissipation | PD | TC=25C | 2.1 | W | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 150 | ||
| Thermal Characteristics | ||||||
| Thermal Resistance junction-case | RJC | 1.1 | /W | |||
| Thermal Resistance junction-to-Ambient | RJA | 60 | /W | |||
| Electrical Characteristics (TJ=25 unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=12V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.5 | -0.9 | -1.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-4.0A | 41 | 50 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-3.5A | 50 | 65 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-2.5V, ID=-2.0A | 60 | 90 | m | |
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, F=1.0MHz | 640 | pF | ||
| Output Capacitance | Coss | VDS=-15V, VGS=0V, F=1.0MHz | 80 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, F=1.0MHz | 55 | pF | ||
| Switching Parameters | ||||||
| Turn-on Delay Time | td(on) | VDS=-15V, ID=-1A, VGS=-10V, RG=3 | 6.5 | nS | ||
| Turn-on Rise Time | tr | VDS=-15V, ID=-1A, VGS=-10V, RG=3 | 3.5 | nS | ||
| Turn-Off Delay Time | td(off) | VDS=-15V, ID=-1A, VGS=-10V, RG=3 | 41 | nS | ||
| Turn-Off Fall Time | tf | VDS=-15V, ID=-1A, VGS=-10V, RG=3 | 9 | nS | ||
| Total Gate Charge | Qg | VDS=-15V, ID=-4.0A, VGS=-10V | 14 | nC | ||
| Gate-Source Charge | Qgs | VDS=-15V, ID=-4.0A, VGS=-10V | 1.5 | nC | ||
| Gate-Drain Charge | Qgd | VDS=-15V, ID=-4.0A, VGS=-10V | 1.6 | nC | ||
| Diode Forward Voltage | VSD | VGS=0V, ISD=-1A | 0.72 | 1.4 | V | |
| Gate resistance | Rg | VGS=0V, VDS=0V, F=1MHz | 7 | |||
| SOT23 Package Information | ||||||
| Dimension | A | 0.900 | 1.150 | mm | ||
| Dimension | A1 | 0.000 | 0.100 | mm | ||
| Dimension | A2 | 0.900 | 1.050 | mm | ||
| Dimension | b | 0.300 | 0.500 | mm | ||
| Dimension | c | 0.080 | 0.150 | mm | ||
| Dimension | D | 2.800 | 3.000 | mm | ||
| Dimension | E | 1.200 | 1.400 | mm | ||
| Dimension | E1 | 2.250 | 2.550 | mm | ||
| Dimension | e | 0.950 TYP. | mm | |||
| Dimension | e1 | 1.800 | 2.000 | mm | ||
| Dimension | L | 0.300 REF. | 0.550 REF. | mm | ||
| Dimension | L1 | 0.300 | 0.500 | mm | ||
| Dimension | L2 | 0.25 TYP. | mm | |||
| Dimension | 0 | 8 | ||||
Notes:
- 1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
- 2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
- 3. Essentially independent of operating temperature.
2410010404_Leiditech-STR2P3LLH6_C3040112.pdf
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