N Channel MOSFET Leiditech LMTL2N02 20V Featuring Low Gate Charge Suitable for UPS and Load Switches
Key Attributes
Model Number:
LMTL2N02
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
RDS(on):
56mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
29pF
Output Capacitance(Coss):
46pF
Pd - Power Dissipation:
700mW
Input Capacitance(Ciss):
280pF
Gate Charge(Qg):
2.9nC@4.5V
Mfr. Part #:
LMTL2N02
Package:
SOT-23
Product Description
Product Overview
The LMTL2N02 is a 20V N-Channel Enhancement Mode MOSFET featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is ideally suited for battery protection and other switching applications, including load switches and uninterruptible power supplies.
Product Attributes
- Brand: Leiditech
- Model: LMTL2N02
- Package Type: SOT-23
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| General Features | |||||
| VDS | - | - | - | 20 | V |
| ID | @ VGS=4.5V | - | - | 2.3 | A |
| RDS(ON) | @ VGS=4.5V | - | - | 56 | m |
| Absolute Maximum Ratings | |||||
| VDS | (TC=25unless otherwise noted) | - | - | 20 | V |
| VGS | - | - | - | 12 | V |
| ID@ TA=25 | Continuous Drain Current, VGS @ 4.5V | - | - | 2.3 | A |
| ID@ TA=70 | Continuous Drain Current, VGS @ 4.5V | - | - | 1.8 | A |
| IDM | Pulsed Drain Current | - | - | 14 | A |
| PD | Total Power Dissipation @ TA=25 | - | - | 0.7 | W |
| RJA | Thermal Resistance Junction-to-Ambient@Steady State | - | - | 178 | / W |
| TJ ,TSTG | Junction and Storage Temperature Range | -55 | - | +150 | |
| Electrical Characteristics | |||||
| BVDSS | Drain-Source Breakdown Voltage, VGS= 0V, ID=250A | 20 | 21 | - | V |
| IDSS | Zero Gate Voltage Drain Current, VDS=20V,VGS=0V,TC=25 | - | 1 | - | A |
| IGSS | Gate-Body Leakage Current, VGS= 12V, VDS=0V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage, VDS= VGS, ID=250A | 0.52 | 0.66 | 0.9 | V |
| RDS(ON) | Static Drain-Source On- Resistance, VGS= 4.5V, ID=2.0A | - | 43 | 56 | m |
| RDS(ON) | Static Drain-Source On- Resistance, VGS= 2.5V, ID=1.5A | - | 58 | 78 | m |
| Ciss | Input Capacitance, VDS=10V,VGS=0V,f=1MHZ | - | 280 | - | pF |
| Coss | Output Capacitance | - | 46 | - | pF |
| Crss | Reverse Transfer Capacitance | - | 29 | - | pF |
| Qg | Total Gate Charge, VGS=4.5V,VDS=10V,ID=3.0A | - | 2.9 | - | nC |
| Qgs | Gate Source Charge | - | 0.4 | - | - |
| Qgd | Gate Drain Charge | - | 0.6 | - | - |
| tD(on) | Turn-on Delay Time, VGS=4.5V,VDD=10V, RL=1.5, RGEN=3 | - | 13 | - | ns |
| tr | Turn-on Rise Time | - | 54 | - | ns |
| tD(off) | Turn-off Delay Time | - | 18 | - | ns |
| tf | Turn-off Fall Time | - | 11 | - | ns |
| IS | Maximum Body-Diode Continuous Current | - | - | 3.0 | A |
| VSD | Diode Forward Voltage, IS=3.0A,VGS=0V | - | - | 1.2 | V |
| Package Marking and Ordering Information | |||||
| Device Marking | LMTL2N02 | - | - | - | - |
| Device | - | - | - | - | - |
| Package | SOT-23 | - | - | - | - |
| Reel Size | 180mm | - | - | - | - |
| Tape width | 8 mm | - | - | - | - |
| Quantity | 3000 units | - | - | - | - |
| Dimensions SOT-23 | |||||
| Symbol | Dimensions in Millimeters | MIN. | MAX. | - | - |
| A | - | 0.900 | 1.150 | - | - |
| A1 | - | 0.000 | 0.100 | - | - |
| A2 | - | 0.900 | 1.050 | - | - |
| b | - | 0.300 | 0.500 | - | - |
| c | - | 0.080 | 0.150 | - | - |
| D | - | 2.800 | 3.000 | - | - |
| E | - | 1.200 | 1.400 | - | - |
| E1 | - | 2.250 | 2.550 | - | - |
| e | - | 0.950TYP | - | - | - |
| e1 | - | 1.800 | 2.000 | - | - |
| L | - | 0.550REF | - | - | - |
| L1 | - | 0.300 | 0.500 | - | - |
| - | 0 | 8 | - | - | |
2206211730_Leiditech-LMTL2N02_C3040120.pdf
Related Products
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
