N Channel Enhancement Mode Power MOSFET Leiditech SQS164ELNW with 20 Amp Continuous Drain Current
Key Attributes
Model Number:
SQS164ELNW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
RDS(on):
13mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.1pF
Number:
1 N-channel
Output Capacitance(Coss):
199.5pF
Input Capacitance(Ciss):
1.1821nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
18.4nC@10V
Mfr. Part #:
SQS164ELNW
Package:
DFN3x3-8L
Product Description
Product Overview
The AP65N06DF is a high-performance N-Channel Enhancement Mode Power MOSFET designed for various industrial applications. It features a DFN3*3-8L package, offering excellent thermal performance with a junction-to-case thermal resistance of 2.1 C/W. This MOSFET is built for robust operation, with a continuous drain current of 20 A at 25C and a pulsed drain current of up to 60 A. Its low on-state resistance (RDS(ON)) of 7.5 m at VGS=10 V and ID=20 A, along with efficient switching characteristics, makes it suitable for power management solutions.
Product Attributes
- Brand: Leiditech
- Model Series: AP65N06DF
- Package Type: DFN3*3-8L
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Product Code: SQS164ELNW
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain source voltage | @Tj=25 | 60 | V | ||
| VGS | Gate source voltage | @Tj=25 | 20 | V | ||
| ID@TA=25 | Continuous drain current | @Tj=25 | 20 | A | ||
| ID@TA=70 | Continuous drain current | @Tj=70 | 11 | A | ||
| IDM | Pulsed drain current | @Tj=25 | 60 | A | ||
| PD@TA=25 | Power dissipation | @Tj=25 | 60 | W | ||
| EAS | Single pulsed avalanche energy | @Tj=25 | 30 | mJ | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| Tj | Operation and storage temperature | -55 | 150 | |||
| RJC | Thermal resistance, junction-case | 2.1 | C/W | |||
| RJA | Thermal resistance, junction-ambient | 5) | 85 | C/W | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-source breakdown voltage | VGS=0 V, ID=250 A | 60 | 68 | V | |
| VGS(th) | Gate threshold voltage | VDS=VGS, ID=250 A | 1.2 | 1.5 | 2.5 | V |
| RDS(ON) | Drain-source on-state resistance | VGS=10 V, ID=20 A | 7.5 | 10 | m | |
| RDS(ON) | Drain-source on-state resistance | VGS=4.5 V, ID=10 A | 10 | 13 | m | |
| IGSS | Gate-source leakage current | VGS=20 V | 100 | nA | ||
| IDSS | Drain-source leakage current | VDS=60 V, VGS=0 V | 1 | A | ||
| Ciss | Input capacitance | VGS=0 V, VDS=50 V, =100 kHz | 1182.1 | pF | ||
| Coss | Output capacitance | VGS=0 V, VDS=50 V, =100 kHz | 199.5 | pF | ||
| Crss | Reverse transfer capacitance | VGS=0 V, VDS=50 V, =100 kHz | 4.1 | pF | ||
| td(on) | Turn-on delay time | VGS=10 V, VDS=50 V, RG=2 , ID=10 A | 17.9 | ns | ||
| tr | Rise time | VGS=10 V, VDS=50 V, RG=2 , ID=10 A | 4.0 | ns | ||
| td(off) | Turn-off delay time | VGS=10 V, VDS=50 V, RG=2 , ID=10 A | 34.9 | ns | ||
| tf | Fall time | VGS=10 V, VDS=50 V, RG=2 , ID=10 A | 5.5 | ns | ||
| Qg | Total gate charge | ID=10 A, VDS=50 V, VGS=10 V | 18.4 | nC | ||
| Qgs | Gate-source charge | ID=10 A, VDS=50 V, VGS=10 V | 3.3 | nC | ||
| Qgd | Gate-drain charge | ID=10 A, VDS=50 V, VGS=10 V | 3.1 | nC | ||
| Vplateau | Gate plateau voltage | ID=10 A, VDS=50 V, VGS=10 V | 2.8 | V | ||
| IS | Diode forward current | VGS<Vth | 60 | A | ||
| ISP | Pulsed source current | VGS<Vth | 180 | A | ||
| VSD | Diode forward voltage | IS=20 A, VGS=0 V | 1.3 | V | ||
| trr | Reverse recovery time | IS=10 A, di/dt=100 A/s | 41.8 | ns | ||
| Qrr | Reverse recovery charge | IS=10 A, di/dt=100 A/s | 36.1 | nC | ||
| Irrm | Peak reverse recovery current | IS=10 A, di/dt=100 A/s | 1.4 | A | ||
| Package Mechanical Data-DFN3*3-8L | ||||||
| Symbol | Description | Min | Nom | Max | Unit | |
| A | 0.70 | 0.75 | 0.85 | mm | ||
| A1 | / | / | 0.05 | mm | ||
| b | 0.20 | 0.30 | 0.40 | mm | ||
| c | 0.10 | 0.152 | 0.25 | mm | ||
| D | 3.15 | 3.30 | 3.45 | mm | ||
| D1 | 3.00 | 3.15 | 3.25 | mm | ||
| D2 | 2.29 | 2.45 | 2.65 | mm | ||
| E | 3.15 | 3.30 | 3.45 | mm | ||
| E1 | 2.90 | 3.05 | 3.20 | mm | ||
| E2 | 1.54 | 1.74 | 1.94 | mm | ||
| E3 | 0.28 | 0.48 | 0.65 | mm | ||
| E4 | 0.37 | 0.57 | 0.77 | mm | ||
| E5 | 0.10 | 0.20 | 0.30 | mm | ||
| e | 0.60 | 0.65 | 0.70 | mm | ||
| K | 0.59 | 0.69 | 0.89 | mm | ||
| L | 0.30 | 0.40 | 0.50 | mm | ||
| L1 | 0.06 | 0.125 | 0.20 | mm | ||
| t | 0 | 0.075 | 0.13 | mm | ||
| 10 | 12 | 14 | ||||
2410121607_Leiditech-SQS164ELNW_C3647075.pdf
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