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quality 20V P Channel MOSFET Leiditech DMP2123LQ optimized for low gate charge and operation in power management factory
quality 20V P Channel MOSFET Leiditech DMP2123LQ optimized for low gate charge and operation in power management factory

20V P Channel MOSFET Leiditech DMP2123LQ optimized for low gate charge and operation in power management

Key Attributes
Model Number: DMP2123LQ
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
RDS(on):
165mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
34pF
Number:
1 P-Channel
Input Capacitance(Ciss):
290pF@10V
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
3nC@10V
Mfr. Part #:
DMP2123LQ
Package:
SOT-23
Product Description

Product Overview

The DMP2123LQ is a 20V P-Channel Enhancement Mode MOSFET designed for applications requiring excellent RDS(ON), low gate charge, and operation with low gate voltages as low as 2.5V. It utilizes advanced trench technology to provide high performance. This device is suitable for battery protection, load switching, and uninterruptible power supply applications.

Product Attributes

  • Brand: Leiditech
  • Device Marking: A1SHB
  • Package: SOT-23
  • Reel Size: 180mm
  • Tape Width: 8 mm
  • Quantity per Reel: 3000 units

Technical Specifications

Symbol Parameter Condition Min Typ Max Units
General Features
VDS Drain-Source Voltage -20 V
VGS Gate-Source Voltage 12 V
ID Drain Current-Continuous -2.3 A
IDM Drain Current -Pulsed (Note 1) -10 A
PD Maximum Power Dissipation (TC=25 unless otherwise noted) 0.7 W
TJ,TSTG Operating Junction and Storage Temperature Range -55 To 150
RJA Thermal Resistance, Junction-to-Ambient (Note 2) 178 /W
RDS(ON) Drain-Source On-State Resistance VGS=-4.5V, ID=-2 A 135 165 m
RDS(ON) Drain-Source On-State Resistance VGS=-2.5V, ID=-1.8A 150 185 m
Electrical Characteristics (TJ=25, unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250A -20 V
IDSS Zero Gate Voltage Drain Current VDS=-20V,VGS=0V -1 A
IGSS Gate-Body Leakage Current VGS=12V,VDS=0V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS,ID=-250A -0.5 -0.7 -1.2 V
gFS Forward Transconductance VDS=-5V,ID=-2A 4 S
Clss Input Capacitance VDS=-10V,VGS=0V, F=1.0MHz 290 PF
Coss Output Capacitance 60 PF
Crss Reverse Transfer Capacitance 34 PF
td(on) Turn-on Delay Time VDD=-10V, RL=5, VGS=-4.5V,RGEN=3 10 nS
tr Turn-on Rise Time 5.0 nS
td(off) Turn-Off Delay Time 21 nS
tf Turn-Off Fall Time 7 nS
Qg Total Gate Charge VDS=-10V,ID=-2A, VGS=-4.5V 3.0 nC
Qgs Gate-Source Charge 0.5 nC
Qgd Gate-Drain Charge 0.8 nC
VSD Diode Forward Voltage (Note 3) VGS=0V,IS=-2A -1.2 V
Package Mechanical Data: SOT-23
Symbol Dimensions in Millimeters MIN. MAX.
A 0.900 1.150
A1 0.000 0.100
A2 0.900 1.050
b 0.300 0.500
c 0.080 0.150
D 2.800 3.000
E 1.200 1.400
E1 2.250 2.550
e 0.950 TYP
e1 1.800 2.000
L 0.550 REF
L1 0.300 0.500
0 8

2410121740_Leiditech-DMP2123LQ_C3647032.pdf

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