P Channel Enhancement Mode MOSFET Leiditech STL12P6F6 with 50A Continuous Drain Current and 100V Voltage Rating
Key Attributes
Model Number:
STL12P6F6
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
RDS(on):
62mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Number:
1 P-Channel
Output Capacitance(Coss):
194pF
Pd - Power Dissipation:
140W
Input Capacitance(Ciss):
2.12nF
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
STL12P6F6
Package:
DFN5x6-8L
Product Description
Product Overview
The STL12P6F6 is a P-Channel Enhancement Mode MOSFET designed for various applications. It features a -100V Drain-Source Voltage and a continuous drain current of -50A at 25 (VGS @ -10V). This MOSFET offers robust performance with an absolute maximum rating for pulsed drain current up to -150A and single pulse avalanche energy of 87 mJ. It is suitable for applications requiring high power dissipation, with a total power dissipation of 140W at 25. The device operates within a wide temperature range, from -55 to 150 for both storage and junction temperature.
Product Attributes
- Brand: Leiditech
- Product ID: STL12P6F6
- Type: P-Channel Enhancement Mode MOSFET
- Package: DFN5*6-8L Single
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units | |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | |||||||
| VDS | Drain-Source Voltage | -100 | V | ||||
| VGS | Gate-Source Voltage | 20 | V | ||||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -50 | A | ||||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1 | -28 | A | ||||
| IDM | Pulsed Drain Current2 | -150 | A | ||||
| EAS | Single Pulse Avalanche Energy3 | 87 | mJ | ||||
| IAS | Avalanche Current | -35 | A | ||||
| PD@TC=25 | Total Power Dissipation4 | 140 | W | ||||
| TSTG | Storage Temperature Range | -55 | 150 | ||||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||||
| RJA | Thermal Resistance Junction-Ambient | 125 | /W | ||||
| RJC | Thermal Resistance Junction-Case1 | 1.1 | /W | ||||
| Electrical Characteristics (TJ =25 , unless otherwise noted) | |||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250A | -100 | - | - | V | |
| IDSS | Zero Gate Voltage Drain Current | VDS=-100V, VGS=0V | - | - | -1.0 | A | |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= 20V | - | - | 100 | nA | |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=-250A | -1.0 | -1.6 | -2.5 | V | |
| RDS(on) | Static Drain-Source on-Resistance | VGS=-10V, ID=-20A | - | 40 | 52 | m | |
| RDS(on) | Static Drain-Source on-Resistance | VGS=-4.5V, ID=-10A | - | 44 | 62 | m | |
| Ciss | Input Capacitance | VDS=-50V, VGS=0V, f=1.0MHz | - | 2120 | - | pF | |
| Coss | Output Capacitance | - | 194 | - | pF | ||
| Crss | Reverse Transfer Capacitance | - | 13 | - | pF | ||
| Qg | Total Gate Charge | VDS=-50V, ID=-5A, VGS=-10V | - | 40 | - | nC | |
| Qgs | Gate-Source Charge | - | 7.8 | - | nC | ||
| Qgd | Gate-Drain(Miller) Charge | - | 8.6 | - | nC | ||
| td(on) | Turn-on Delay Time | VDD=-50V, ID=-5A, RG=6, VGS=-10V | - | 13 | - | ns | |
| tr | Turn-on Rise Time | - | 39 | - | ns | ||
| td(off) | Turn-off Delay Time | - | 100.1 | - | ns | ||
| tf | Turn-off Fall Time | - | 105.3 | - | ns | ||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | -35 | A | ||
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | -140 | A | ||
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=-30A | - | - | -1.2 | V | |
| trr | Body Diode Reverse Recovery Time | TJ=25, IF=-5A,dI/dt=100A/s | - | 104 | - | ns | |
| Qrr | Body Diode Reverse Recovery Charge | - | 280 | - | nC | ||
| Package Mechanical Data-DFN5*6-8L Single | |||||||
| Symbol | Common | mm | Inch | Min | Max | Min | Max |
| A | 1.03 | 1.17 | 0.0406 | 0.0461 | |||
| b | 0.34 | 0.48 | 0.0134 | 0.0189 | |||
| c | 0.824 | 0.0970 | 0.0324 | 0.082 | |||
| D | 4.80 | 5.40 | 0.1890 | 0.2126 | |||
| D1 | 4.11 | 4.31 | 0.1618 | 0.1697 | |||
| D2 | 4.80 | 5.00 | 0.1890 | 0.1969 | |||
| E | 5.95 | 6.15 | 0.2343 | 0.2421 | |||
| E1 | 5.65 | 5.85 | 0.2224 | 0.2303 | |||
| E2 | 1.60 | / | 0.0630 | / | |||
| e | BSC | 1.27 | BSC | 0.05 | BSC | ||
| L | 0.05 | 0.25 | 0.0020 | 0.0098 | |||
| L1 | 0.38 | 0.50 | 0.0150 | 0.0197 | |||
| L2 | 0.38 | 0.50 | 0.0150 | 0.0197 | |||
| H | 3.30 | 3.50 | 0.1299 | 0.1378 | |||
| I | / | 0.18 | / | 0.0070 | |||
Notes:
1 The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width 300us, duty cycle 2%.
3 The EAS data shows Max. rating. The test condition is V DD =-25V, V GS =-10V, L=0.1mH, IAS =-24A.
4 The power dissipation is limited by 150 junction temperature.
5 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121549_Leiditech-STL12P6F6_C3647073.pdf
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