Power mosfet Leiditech 2N7002NT designed for portable equipment and low voltage drive applications

Name: Power mosfet Leiditech 2N7002NT designed for portable equipment and low voltage drive applications
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: 2N7002NT
Availability: InStock

Key Attributes

Model Number: 2N7002NT

Product Custom Attributes

Drain To Source Voltage:

30V

Current - Continuous Drain(Id):

150mA

Operating Temperature -:

-55℃~+150℃

RDS(on):

8Ω@4.5V

Gate Threshold Voltage (Vgs(th)):

1.5V@100uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

4pF

Number:

Input Capacitance(Ciss):

13pF

Pd - Power Dissipation:

150mW

Gate Charge(Qg):

Mfr. Part #:

2N7002NT

Package:

SOT-523

Product Description

Product Overview

The 2N7002NT is an N-channel enhancement mode power MOSFET designed for low voltage drive applications, making it ideal for portable equipment and interfacing/switching tasks. It features low on-resistance, fast switching speed, and easily designed drive circuits, facilitating parallel configurations. This MOSFET is presented in an SOT-523 package.

Product Attributes

Brand: Leiditech
Model: 2N7002NT
Package Type: SOT-523
Technology: N-Channel Enhancement Mode Power MOSFET

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted)
Drain-Source Voltage	VDS				30	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current	ID					A
Power Dissipation	PD				0.15	W
Junction Temperature	TJ				150
Storage Temperature	Tstg		-55		+150
Thermal Resistance, Junction-to-Ambient	RJA			833	/W
Off Characteristics
Drain-Source Breakdown Voltage	V(BR)DSS	VGS = 0V, ID = 10A	30			V
Zero Gate Voltage Drain Current	IDSS	VDS =30V,VGS = 0V			1	A
Gate Source leakage current	IGSS	VGS =20V, VDS = 0V			2	A
Gate Threshold Voltage	VGS(th)	VDS =3V, ID =100A	1.5			V
On Characteristics
Drain-Source On-Resistance	RDS(on)	VGS = 10V, ID =200mA		0.15	4
Drain-Source On-Resistance	RDS(on)	VGS =4.5V,ID =150mA		0.6	8
Forward Transconductance	gFS	VDS =3V, ID =10mA		20		mS
Dynamic Characteristics*
Input Capacitance	Ciss	VDS =5V,VGS =0V,f =1MHz		13		pF
Output Capacitance	Coss	VDS =5V,VGS =0V,f =1MHz		9		pF
Reverse Transfer Capacitance	Crss	VDS =5V,VGS =0V,f =1MHz		4		pF
Switching Characteristics*
Turn-On Delay Time	td(on)	VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500		15		ns
Rise Time	tr	VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500		35		ns
Turn-Off Delay Time	td(off)	VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500		80		ns
Fall Time	tf	VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500		80		ns
Other Parameters
Drain-Source Breakdown Voltage	V(BR)DSS		30			V
RDS(on)MAX					0.15	4@10V
RDS(on)MAX					0.6	8@4.5V
ID				150mA
TD*				0.15		4@10V
TD*				0.6		8@4.5V

*These parameters have no way to verify.

Package Dimensions (SOT-523):

DIM	MILLIMETERS	INCHES
	MIN	MAX	MIN	MAX
A	0.70	0.90	0.028	0.035
A1	0.00	0.10	0.000	0.004
A2	0.70	0.80	0.028	0.031
b1	0.15	0.25	0.006	0.010
b2	0.25	0.35	0.010	0.014
c	0.10	0.20	0.004	0.008
D	1.50	1.70	0.059	0.067
E	0.70	0.90	0.028	0.035
E1	1.45	1.75	0.057	0.069
e		0.50 TYP.		0.020 TYP.
e1	0.90	1.10	0.035	0.043
L		0.40 REF.		0.016 REF.
L1	0.10	0.30	0.004	0.012

Notes:

Above package outline conforms to JEITA EAIJ ED-7500A SC-75A.
Dimensions are exclusive of Burrs, Mold Flash & Tie Bar extrusions.

Contact Information:

Website: www.leiditech.com
Email: sale1@leiditech.com
Tel: +86- 021 50828806
Fax: +86- 021 50477059

2202131930_Leiditech-2N7002NT_C2836921.pdf

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