semiconductor device Leiditech SN7002W offering 1000V ESD protection RoHS compliant and halogen free
Key Attributes
Model Number:
SN7002W
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
RDS(on):
1.4Ω@10V,500mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
50pF@25V
Pd - Power Dissipation:
225mW
Mfr. Part #:
SN7002W
Package:
SC-70(SOT-323)
Product Description
Product Overview
The SN7002W is a semiconductor device designed for electronic applications. It offers ESD protection up to 1000V and complies with RoHS requirements and Halogen Free standards. This device is suitable for various applications requiring reliable performance and protection.
Product Attributes
- Brand: Leiditech
- Model: SN7002W
- Package Type: SC70(SOT-323)
- Certifications: RoHS compliant, Halogen Free
- ESD Protection: 1000V
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS | ||||||
| GateSource Voltage Continuous | VGS | ±20 | Vdc | |||
| GateSource Voltage Pulsed | VGSM | ±40 | Vdc | (Note 1) | ||
| DrainGate Voltage (RGS = 1.0 M) | VDGR | 60 | Vdc | |||
| DrainSource Voltage | VDSS | 60 | Vdc | |||
| Drain Current Continuous | ID | 225 | mAdc | TC = 25°C | ||
| Drain Current Pulsed | IDM | 1.8 | A | (Note 1) | ||
| Total Device Dissipation, FR–5 Board | PD | 556 | mW | @ TA = 25°C (Note 2) | ||
| Derate above 25°C | 1.8 | mW/°C | ||||
| Junction and Storage temperature | TJ, Tstg | -55 | +150 | °C | ||
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance, Junction–to–Ambient | RΘJA | 500 | °C/W | (Note 2) | ||
| ELECTRICAL CHARACTERISTICS (Ta= 25°C) | ||||||
| DrainSource Breakdown Voltage | VBRDSS | 60 | Vdc | (VGS = 0, ID = 10μAdc) | ||
| Zero Gate Voltage Drain Current | IDSS | - | -800 | μAdc | TJ = 25°C (VGS = 0, VDS = 60 Vdc) | |
| - | -115 | μAdc | TJ = 125°C | |||
| GateBody Leakage Current, Forward | IGSSF | - | 1.0 | μAdc | (VGS = 20 Vdc) | |
| GateBody Leakage Current, Reverse | IGSSR | - | -1.0 | μAdc | (VGS = - 20 Vdc) | |
| ON CHARACTERISTICS (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | 1.0 | 2.5 | Vdc | (VDS = VGS, ID = 250μAdc) | |
| OnState Drain Current | ID(on) | 500 | mAdc | (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) | ||
| Static DrainSource OnState Voltage | VDS(on) | - | 1.4 | Vdc | (VGS = 10 Vdc, ID = 500 mAdc) | |
| - | 7.5 | Vdc | (VGS = 5.0 Vdc, ID = 50 mAdc) | |||
| Static DrainSource OnState Resistance | RDS(on) | 1.8 | 3.75 | Ω | (VGS = 10 Vdc, ID = 500 mAdc) TC = 25°C | |
| 2.5 | 13.5 | Ω | (VGS = 10 Vdc, ID = 500 mAdc) TC = 125°C | |||
| 13.5 | Ω | (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C | ||||
| 1.6 | Ω | (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 125°C | ||||
| Forward Transconductance | gfs | 500 | mmhos | (VDS≥ 2.0 VDS(on), ID = 200 mAdc) | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | Ciss | 10 | pF | (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) | ||
| Output Capacitance | Coss | 25 | pF | (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) | ||
| Reverse Transfer Capacitance | Crss | 7 | pF | (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn–On Delay Time | td(on) | 11 | ns | (VDD = 25 Vdc , ID =500 mAdc, RG = 25Ω,RL = 50 Ω,Vgen = 10 V) | ||
| Turn–Off Delay Time | td(off) | 40 | ns | (VDD = 25 Vdc , ID =500 mAdc, RG = 25Ω,RL = 50 Ω,Vgen = 10 V) | ||
| BODY–DRAIN DIODE RATINGS | ||||||
| Diode Forward On–Voltage | VSD | -1.5 | Vdc | (IS = 115 mAdc, VGS = 0 V) | ||
| Source Current Continuous (Body Diode) | IS | -115 | mAdc | |||
| Source Current Pulsed | ISM | - | 5.0 | A | ||
| DEVICE MARKING AND ORDERING INFORMATION | ||||||
| Marking | 6C | |||||
| Shipping | 3000/Tape&Reel | |||||
| OUTLINE AND DIMENSIONS | ||||||
| Dimension | Symbol | MIN | NOM | MAX | MILLIMETERS | INCHES |
| A | 0.80 | 0.90 | 0.032 | 0.035 | ||
| A1 | 0.00 | 0.05 | 0.10 | 0.000 | 0.002 | |
| b | 0.10 | 0.25 | 0.004 | 0.010 | ||
| c | 0.071 | 0.150 | 0.003 | 0.006 | ||
| D | 1.80 | 1.90 | 2.00 | 0.071 | 0.075 | |
| E | 1.15 | 1.25 | 1.35 | 0.045 | 0.049 | |
| e | 0.65 REF | 0.026 REF | 0.026 REF | |||
| e1 | 1.20 | 1.30 | 0.047 | 0.051 | ||
| HE | 2.00 | 2.10 | 2.40 | 0.079 | 0.083 | |
| L | 0.30 | 0.40 | 0.56 | 0.012 | 0.022 | |
Notes:
- 1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
- 2. FR–5 = 1.0×0.75×0.062 in.
- 3. Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.
Contact Information:
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
2410121549_Leiditech-SN7002W_C4555456.pdf
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