Low Gate Charge 20V P Channel MOSFET Leiditech SQ2301ES Designed for Load Switching and Power Supplies
Key Attributes
Model Number:
SQ2301ES
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
RDS(on):
185mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
34pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
290pF@10V
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
3nC@4.5V
Mfr. Part #:
SQ2301ES
Package:
SOT-23
Product Description
Product Overview
The SQ2301ES is a 20V P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 2.5V. This device is ideal for applications such as battery protection, load switching, and uninterruptible power supplies.
Product Attributes
- Brand: Leiditech
- Package Type: SOT-23
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID | Drain Current-Continuous | -2.3 | A | |||
| IDM | Drain Current -Pulsed (Note 1) | -10 | A | |||
| PD | Maximum Power Dissipation | (TC=25unless otherwise noted) | 0.7 | W | ||
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance,Junction-to-Ambient (Note 2) | 178 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250A | -20 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=-20V,VGS=0V | -1 | A | ||
| IGSS | Gate-Body Leakage Current | VGS=12V,VDS=0V | 100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS,ID=-250A | -0.5 | -0.7 | -1.2 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=-4.5V, ID=-2 A | 135 | 165 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=-2.5V, ID=-1.8A | 150 | 185 | m | |
| gFS | Forward Transconductance | VDS=-5V,ID=-2A | 4 | S | ||
| Clss | Input Capacitance | VDS=-10V,VGS=0V, F=1.0MHz | 290 | PF | ||
| Coss | Output Capacitance | 60 | PF | |||
| Crss | Reverse Transfer Capacitance | 34 | PF | |||
| td(on) | Turn-on Delay Time | VDD=-10V, RL=5, VGS=-4.5V,RGEN=3 | 10 | nS | ||
| tr | Turn-on Rise Time | 5.0 | nS | |||
| td(off) | Turn-Off Delay Time | 21 | nS | |||
| tf | Turn-Off Fall Time | 7 | nS | |||
| Qg | Total Gate Charge | VDS=-10V,ID=-2A, VGS=-4.5V | 3.0 | nC | ||
| Qgs | Gate-Source Charge | 0.5 | nC | |||
| Qgd | Gate-Drain Charge | 0.8 | nC | |||
| VSD | Diode Forward Voltage (Note 3) | VGS=0V,IS=-2A | -1.2 | V |
| Device Marking | Package | Reel Size | Tape width | Quantity |
|---|---|---|---|---|
| SQ2301ES | SOT-23 | 180mm | 8 mm | 3000 units |
| Symbol | Dimensions in Millimeters | MIN. | MAX. |
|---|---|---|---|
| A | 0.900 | 1.150 | |
| A1 | 0.000 | 0.100 | |
| A2 | 0.900 | 1.050 | |
| b | 0.300 | 0.500 | |
| c | 0.080 | 0.150 | |
| D | 2.800 | 3.000 | |
| E | 1.200 | 1.400 | |
| E1 | 2.250 | 2.550 | |
| e | 0.950TYP | ||
| e1 | 1.800 | 2.000 | |
| L | 0.550REF | ||
| L1 | 0.300 | 0.500 | |
| 0 | 8 |
2410121740_Leiditech-SQ2301ES_C3647028.pdf
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