PNP Silicon Transistor LRC LMBT3906LT1G SOT23 Package AECQ101 Qualified RoHS Compliant for Automotive
Key Attributes
Model Number:
LMBT3906LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
250MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT3906LT1G
Package:
SOT-23
Product Description
Product Overview
The LMBT3906LT1G is a PNP Silicon General Purpose Transistor from LESHAN RADIO COMPANY, LTD., offered in a SOT-23 (TO-236AB) package. It is designed for various electronic applications and is AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other demanding applications requiring unique site and control change requirements. The device complies with RoHS requirements.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package: SOT-23 (TO-236AB)
- Transistor Type: PNP Silicon
- Certifications: AEC-Q101 Qualified, PPAP Capable
- Compliance: RoHS
- Device Marking: 2A
Technical Specifications
| Rating Symbol | Value | Unit | Characteristic | Symbol | Min | Max | Unit |
| MAXIMUM RATINGS | V CEO 40 | Vdc | CollectorEmitter Voltage | V CEO | 40 | Vdc | |
| V CBO 40 | Vdc | CollectorBase Voltage | V CBO | 40 | Vdc | ||
| V EBO 5.0 | Vdc | EmitterBase Voltage | V EBO | 5.0 | Vdc | ||
| I C 200 | mAdc | Collector Current Continuous | I C | 200 | mAdc | ||
| P D 225 (FR 5 Board) | mW | Total Device Dissipation | P D | 225 | mW | ||
| Derate above 25C 1.8 mW/C | |||||||
| P D 300 (Alumina Substrate) | mW | Total Device Dissipation | P D | 300 | mW | ||
| Derate above 25C 2.4 mW/C | |||||||
| R JA 556 (FR 5 Board) | C/W | Thermal Resistance Junction to Ambient | R JA | 556 | C/W | ||
| R JA 417 (Alumina Substrate) | C/W | Thermal Resistance Junction to Ambient | R JA | 417 | C/W | ||
| T J , T stg 55 to +150 | C | Junction and Storage Temperature | T J , T stg | 55 | +150 | C | |
| OFF CHARACTERISTICS | V (BR)CEO 40 | Vdc | CollectorEmitter Breakdown Voltage | V (BR)CEO | 40 | Vdc | |
| (I C = 1.0 mAdc, I B = 0) | |||||||
| V (BR)CBO 40 | Vdc | CollectorBase Breakdown Voltage | V (BR)CBO | 40 | Vdc | ||
| (I C = 10 Adc, I E = 0) | |||||||
| V (BR)EBO 5.0 | Vdc | EmitterBase Breakdown Voltage | V (BR)EBO | 5.0 | Vdc | ||
| (I E = 10 Adc, I C = 0) | |||||||
| I BL 50 | nAdc | Base Cutoff Current | I BL | 50 | nAdc | ||
| (V CE = 30 Vdc, V EB = 3.0 Vdc) | |||||||
| I CEX 50 | nAdc | Collector Cutoff Current | I CEX | 50 | nAdc | ||
| (V CE = 30 Vdc, V EB = 3.0 Vdc) | |||||||
| ON CHARACTERISTICS | hFE 60 | DC Current Gain | hFE | 60 | |||
| (I C = 0.1 mAdc, V CE = 1.0 Vdc) | |||||||
| hFE 80 | DC Current Gain | hFE | 80 | ||||
| (I C = 1.0 mAdc, V CE = 1.0 Vdc) | |||||||
| hFE 100 300 | DC Current Gain | hFE | 100 | 300 | |||
| (I C = 10 mAdc, V CE = 1.0 Vdc) | |||||||
| VCE(sat) 0.25 | Vdc | CollectorEmitter Saturation Voltage | VCE(sat) | 0.25 | Vdc | ||
| (I C = 10 mAdc, I B = 1.0 mAdc) | |||||||
| VBE(sat) 0.65 0.85 | Vdc | BaseEmitter Saturation Voltage | V BE(sat) | 0.65 | 0.85 | Vdc | |
| (I C = 10 mAdc, I B = 1.0 mAdc) | |||||||
| SMALLSIGNAL CHARACTERISTICS | f T 250 | MHz | CurrentGain Bandwidth Product | f T | 250 | MHz | |
| (I C = 10 mAdc, V CE= 20 Vdc, f = 100 MHz) | |||||||
| C obo 4.5 | pF | Output Capacitance | C obo | 4.5 | pF | ||
| (V CB= 5.0 Vdc, I E = 0, f = 1.0 MHz) | |||||||
| C ibo 10 | pF | Input Capacitance | C ibo | 10 | pF | ||
| (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) | |||||||
| SWITCHING CHARACTERISTICS | t d 35 | ns | Delay Time | t d | 35 | ns | |
| (V CC = 3.0 Vdc, V BE = 0.5 Vdc, I C = 10 mAdc, I B1 = 1.0 mAdc) | |||||||
| t r 35 | ns | Rise Time | t r | 35 | ns | ||
| (V CC = 3.0 Vdc, I C = 10 mAdc, I B1 = 1.0 mAdc) | |||||||
| t s 225 | ns | Storage Time | t s | 225 | ns | ||
| (V CC = 3.0 Vdc, I C = 10 mAdc, I B1= I B2 = 1.0 mAdc) | |||||||
| t f 75 | ns | Fall Time | t f | 75 | ns | (V CC = 3.0 Vdc, I C = 10 mAdc, I B1= I B2 = 1.0 mAdc) |
1811022210_LRC-LMBT3906LT1G_C12091.pdf
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