General Purpose NPN Dual Transistor LRC LBC847BDW1T1G Ideal for Automotive and Control Applications
Key Attributes
Model Number:
LBC847BDW1T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC847BDW1T1G
Package:
SC-88
Product Description
Product Overview
The LBC847BDW1T1G and S-LBC847BDW1T1G are NPN dual general-purpose transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualified and PPAP capable. These transistors comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Origin: China (implied by manufacturer location)
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (for S-prefix)
- Packaging: Tape & Reel
Technical Specifications
| Parameter | Symbol | LBC847BDW1T1G (1F) | LBC847BDW1T3G (1F) | S-LBC847BDW1T1G | Unit | Notes |
| CollectorEmitter Voltage (Continuous) | VCEO | 45 | 45 | 45 | V | |
| CollectorBase Voltage | VCBO | 50 | 50 | 50 | V | |
| EmitterBase Voltage | VEBO | 6 | 6 | 6 | V | |
| Collector Current(Continuous) | IC | 100 | 100 | 100 | mA | |
| Total Device Dissipation | PD | 380 | 380 | 380 | mW | Ta = 25C, FR5 Board |
| Thermal Resistance, Junction to Ambient | RJA | 328 | 328 | 328 | C/W | |
| Junction and Storage Temperature | TJ,Tstg | 55+150 | 55+150 | 55+150 | C | |
| CollectorEmitter Breakdown Voltage (IC = 10 mA) | V(BR)CEO | 45 | 45 | 45 | V | |
| CollectorEmitter Breakdown Voltage (IC = 10 A, VEB = 0) | V(BR)CES | 50 | 50 | 50 | V | |
| CollectorBase Breakdown Voltage (IC = 10 A) | V(BR)CBO | 50 | 50 | 50 | V | |
| EmitterBase Breakdown Voltage (IE = 1.0 A) | V(BR)EBO | 6 | 6 | 6 | V | |
| Collector Cutoff Current (VCB = 30 V) | ICBO | 5 | 5 | 5 | nA | |
| Collector Cutoff Current (VCB = 30 V, TA = 150C) | ICBO | 200 | 200 | 200 | A | |
| DC Current Gain (IC = 2.0 mA, VCE = 5.0 V) | hFE | 290-450 | 290-450 | 290-450 | ||
| CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | 0.25 | 0.25 | 0.25 | V | Max. |
| CollectorEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) | VCE(sat) | 0.7 | 0.7 | 0.7 | V | Max. |
| BaseEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | 0.66 | 0.66 | 0.66 | V | Max. |
| BaseEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) | VBE(sat) | 0.77 | 0.77 | 0.77 | V | Max. |
| BaseEmitter Voltage (IC = 2.0 mA, VCE = 5.0 V) | VBE(on) | 0.58 | 0.58 | 0.58 | V | Typ. |
| BaseEmitter Voltage (IC = 10 mA, VCE = 5.0 V) | VBE(on) | 0.60 | 0.60 | 0.60 | V | Typ. |
| CurrentGain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | 100 | 100 | 100 | MHz | |
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | 4.5 | 4.5 | 4.5 | pF | Max. |
| Noise Figure (IC = 0.2 mA,VCE = 5.0 V, RS = 2.0 k, f = 1.0 KHz, BW = 200 Hz) | NF | 10 | 10 | 10 | dB | Max. |
Device Marking and Ordering Information
| Marking | Device | Shipping |
| 1F | LBC847BDW1T1G | 3000/Tape&Reel |
| 1F | LBC847BDW1T3G | 10000/Tape&Reel |
| 1F | S-LBC847BDW1T1G | 3000/Tape&Reel |
Outline and Dimensions
SC88(SOT-363)
2410010130_LRC-LBC847BDW1T1G_C383191.pdf
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