Automotive qualified PNP transistor LRC S-LBSS5240LT1G in SOT23 package offering low collector emitter saturation voltage
Key Attributes
Model Number:
S-LBSS5240LT1G
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
140V
Mfr. Part #:
S-LBSS5240LT1G
Package:
SOT-23
Product Description
Product Overview
The LBSS5240LT1G is a PNP silicon transistor in a SOT23 plastic package, offering low collector-emitter saturation voltage and high current capability. It provides improved device reliability due to reduced heat generation and serves as a replacement for SOT89/SOT223 standard packaged transistors. This device is AEC-Q101 Qualified and PPAP Capable when ordered with the 'S-' prefix for automotive and other applications requiring unique site and control change requirements.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material Compliance: RoHS requirements
- Certifications: AEC-Q101 Qualified (for S- prefix variants)
Technical Specifications
| Symbol | Parameter | Conditions | Value | Unit |
| V CEO | CollectorEmitter Voltage | -40 | V | |
| V CBO | CollectorBase Voltage | -40 | V | |
| V EBO | EmitterBase Voltage | -5.0 | V | |
| I C | Collector Current Continuous | -2 | A | |
| P D | Power Dissipation | 0.3 | W | |
| T j | Junction Temperature | 150 | C | |
| T stg | Storage Temperature | -65 ~+150 | C | |
| Rth(j-a) | Thermal Resistance (Junction to Ambient) | in free air; note 1 | 417 | K/W |
| Rth(j-a) | Thermal Resistance (Junction to Ambient) | in free air; note 2 | 260 | K/W |
| I CFO | Collector-Base Cut-off Current | VCB = 30 V; IE = 0 | -100 | nA |
| I EBO | Emitter-Base Cut-off Current | VBE = 4 V; IC = 0 | -100 | nA |
| hFE | DC Current Gain | VCE = 2 V; IC = 100 mA | 300 | |
| IC = 500 mA | 260 | |||
| IC = 1 A | 210 | |||
| IC = 2 A | 100 | |||
| V CEsat | Collector-Emitter Saturation Voltage | IC = 100 mA; IB = 1 mA | -100 | mV |
| IC = 500 mA; IB = 50 mA | -110 | mV | ||
| IC = 750 mA; IB = 15 mA | -225 | mV | ||
| IC = 1 A; IB = 50 mA | -225 | mV | ||
| IC = 2 A; IB = 200 mA | -350 | mV | ||
| V BE(on) | Base-Emitter Turn-on Voltage | VCE = 2 V; IC = 100 mA | -0.75 | V |
| V BEsat | Base-Emitter Saturation Voltage | IC = 2 A; IB = 200 mA | -1.1 | V |
| fT | Transition Frequency | IC = 100 mA; VCE = 10 V; f = 100 MHz | 100 | MHz |
| Cc | Collector Capacitance | VCB = 10 V; IE = Ie = 0; f = 1 MHz | 28 | pF |
2203311830_LRC-S-LBSS5240LT1G_C2936687.pdf
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