IXTA120P065T Power MOSFET Featuring Extended FBSOA and Fast Intrinsic Diode for Current Regulation
Key Attributes
Model Number:
IXTA120P065T
Product Custom Attributes
Mfr. Part #:
IXTA120P065T
Package:
TO-263AA
Product Description
Product Overview
The IXTA120P065T, IXTP120P065T, and IXTH120P065T are P-Channel Enhancement Mode Power MOSFETs from IXYS, designed for demanding applications. These devices feature an international standard package, avalanche rating, extended FBSOA, fast intrinsic diode, and low RDS(ON) and QG. Their robust design offers advantages such as easy mounting, space savings, and high power density, making them ideal for high-side switching, push-pull amplifiers, DC choppers, automatic test equipment, current regulators, and battery charger applications.
Product Attributes
- Brand: IXYS
- Origin: USA (implied by patent information)
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Model | VDSS (V) | ID25 (A) | RDS(on) (m) | Package |
| IXTA120P065T | -65 | -120 | 10 | TO-263 AA |
| IXTP120P065T | -65 | -120 | 10 | TO-220AB |
| IXTH120P065T | -65 | -120 | 10 | TO-247 |
| Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | VGS = 0V, ID = - 250A | -65 | V | ||
| VGS(th) | VDS = VGS, ID = - 250A | -2.0 | -4.0 | V | |
| IGSS | VGS = 15V, VDS = 0V | 100 | nA | ||
| IDSS | VDS = VDSS, VGS = 0V | -10 | A | ||
| IDSS | TJ = 125C | -750 | A | ||
| RDS(on) | VGS = -10V, ID = 0.5 ID25, Note 1 | 10 | m | ||
| gfs | VDS = -10V, ID = 0.5 ID25, Note 1 | 45 | 75 | S | |
| Ciss | VGS = 0V, VDS = - 25V, f = 1MHz | 13.2 | nF | ||
| Coss | VGS = 0V, VDS = - 25V, f = 1MHz | 1345 | pF | ||
| Crss | VGS = 0V, VDS = - 25V, f = 1MHz | 505 | pF | ||
| td(on) | Resistive Switching Times | 31 | ns | ||
| tr | Resistive Switching Times | 28 | ns | ||
| td(off) | Resistive Switching Times | 38 | ns | ||
| tf | Resistive Switching Times | 21 | ns | ||
| Qg(on) | VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 185 | nC | ||
| Qgs | VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 55 | nC | ||
| Qgd | VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 58 | nC | ||
| RthJC | 0.42 | C/W | |||
| RthCS (TO-220) | 0.50 | C/W | |||
| RthCS (TO-247) | 0.21 | C/W | |||
| IS | Source-Drain Diode, VGS = 0V | -120 | A | ||
| ISM | Source-Drain Diode, Repetitive, Pulse Width Limited by TJM | -480 | A | ||
| VSD | Source-Drain Diode, IF = - 60A, VGS = 0V, Note 1 | -1.3 | V | ||
| trr | Source-Drain Diode | 53 | ns | ||
| QRM | Source-Drain Diode | 77 | nC | ||
| IRM | Source-Drain Diode | -2.9 | A |
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
| Continuous Drain Current | ID25 | -120 | A | ||
| Pulsed Drain Current | IDM | -360 | A | ||
| Continuous Drain Current (Case Temp 25C) | IA | -60 | A | ||
| Avalanche Energy | EAS | 1 | J | ||
| Power Dissipation | PD | 298 | W | ||
| Operating Junction Temperature | TJ | -55 | 150 | C | |
| Maximum Junction Temperature | TJM | 150 | C | ||
| Storage Temperature | Tstg | -55 | 150 | C | |
| Lead Temperature for Soldering | TL | 300 | C | ||
| Mounting Torque | Md | 1.13 | Nm/lb.in. | ||
| Weight (TO-263) | 2.5 | g | |||
| Weight (TO-220) | 3.0 | g | |||
| Weight (TO-247) | 6.0 | g |
2410301808_Littelfuse-IXTA120P065T_C7290983.pdf
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