Silicon Voltage Triggered Switch Littelfuse K1100G Featuring Low On State Voltage and Conduction
Key Attributes
Model Number:
K1100G
Product Custom Attributes
Repetitive Peak On-state Current (Itrm):
1A
Mfr. Part #:
K1100G
Package:
DO-15
Product Description
Product Description
The SIDAC is a silicon bilateral voltage triggered switch designed for high-voltage applications. Upon exceeding the SIDAC breakover voltage, it switches to a low on-state voltage and maintains conduction until the current drops below the holding current. Featuring glass-passivated junctions for ruggedness and dependability, these devices are suitable for harsh environments. Applications include high voltage power supplies, natural gas igniters, high-pressure sodium lamps, and Xenon flash ignition.
Product Attributes
- Brand: Teccor
- Type: Standard Bidirectional SIDACs
- Certifications: RoHS Compliant
- Material: Glass-passivated junctions, UL recognized epoxy (94V-0 flammability)
- Terminal Finish: 100% Matte Tin Plated / Pb-free Solder Dipped
Technical Specifications
| Symbol | Parameters | Test Conditions | Min | Max | Unit | Notes |
| VBO | Breakover/Trigger Voltage | K0900y | 79 | 97 | V | xxx = voltage, z = circuit function, y = package |
| K1050y | 95 | 113 | V | |||
| K1100y | 104 | 118 | V | |||
| K1200y | 110 | 125 | V | |||
| K1300y | 120 | 138 | V | |||
| K1400y | 130 | 146 | V | |||
| K1500y | 140 | 170 | V | |||
| K1800y | 165 | 195 | V | |||
| K200zy | 190 | 215 | V | |||
| K220zy | 205 | 230 | V | |||
| K240zy | 220 | 250 | V | |||
| K250zy | 240 | 280 | V | |||
| K300zy | 270 | 330 | V | |||
| VDRM | Repetitive Peak Off-state Voltage | K0900y | 70 | V | xxx = voltage, z = circuit function, y = package | |
| K1050y | 90 | V | ||||
| K1100y | 90 | V | ||||
| K1200y | 90 | V | ||||
| K1300y | 90 | V | ||||
| K1400y | 90 | V | ||||
| K1500y | 90 | V | ||||
| K1800y | 140 | V | ||||
| K200zy | 180 | V | ||||
| K220zy | 180 | V | ||||
| K240zy | 190 | V | ||||
| K250zy | 200 | V | ||||
| K300zy | 200 | V | ||||
| IT(RMS) | On-state RMS Current | 50/60Hz, TJ < 125C | 1 | A | ||
| IDRM | Repetitive Peak Off-state Current | V = VDRM, 50/60Hz Sine Wave | 5 | µA | ||
| VTM | Peak On-state Voltage | IT = 1A, Kxxx0y | 1.5 | V | ||
| IT = 1A, Kxxx2y | 3.0 | V | ||||
| IH | Dynamic Holding Current | RL = 100Ω, 50/60Hz Sine Wave | 150 | mA | ||
| RS | Switching Resistance | (VBO – VS) / (IS – IBO), 50/60Hz Sine Wave | 100 | Ω | ||
| IBO | Breakover Current | 50/60Hz Sine Wave | 10 | µA | ||
| ITRM | Peak Repetitive Pulse Current | tp = 10µs, 60Hz | 80 | A | (refer to figure 4) | |
| tp = 10µs, 5Hz | 160 | A | ||||
| ITSM | Peak Non-repetitive Surge Current | Single Cycle 60Hz | 20 | A | (refer to figure 5) | |
| Single Cycle 50Hz | 16.7 | A | ||||
| di/dt | Critical Rate of Rise of On-state Current | 150 | A/µs | |||
| dv/dt | Critical Rate of Rise of Off-state Voltage | 1500 | V/µs | |||
| TS | Storage Temperature Range | -40 | 150 | °C | ||
| TJ | Junction Temperature Range | -40 | 125 | °C | ||
| RθJL | Thermal Resistance, Junction to Lead | DO-15 | 18 | °C/W | ||
| DO-214 (1) | 30 | °C/W | (1) Mounted on 1 cm² copper foil surface; two-ounce copper foil | |||
| TO-92 | °C/W | |||||
| RθJC | Thermal Resistance, Junction to Case | TO-92 | 35 | °C/W | ||
| °C/W | ||||||
| RθJA | Thermal Resistance, Junction to Ambient | DO-15 | 75 | °C/W | ||
| TO-92 | 95 | °C/W |
2410122014_Littelfuse-K1100G_C17527970.pdf
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