PNP Silicon Transistor LRC LBC857CWT1G RoHS Compliant SOT323 SC70 Package for Amplifier Applications
Key Attributes
Model Number:
LBC857CWT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
4uA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC857CWT1G
Package:
SC-70
Product Description
Product Overview
These PNP silicon transistors are designed for general-purpose amplifier applications. They are housed in the SOT-323/SC-70 package, suitable for low-power surface mount applications. The devices comply with RoHS requirements.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package Type: SOT-323 / SC-70
- Certifications: RoHS compliant
Technical Specifications
| Characteristic | Symbol | BC856 | BC857 | BC858 | Unit |
| MAXIMUM RATINGS | |||||
| CollectorEmitter Voltage | V CEO | 65 | 45 | 30 | V |
| CollectorBase Voltage | V CBO | 80 | 50 | 30 | V |
| EmitterBase Voltage | V EBO | 5.0 | 5.0 | 5.0 | V |
| Collector Current Continuous | I C | 100 | 100 | 100 | mAdc |
| Total Device Dissipation FR 5 Board, TA = 25C | P D | 150 | mW | ||
| Thermal Resistance, Junction to Ambient | R JA | 833 | C/W | ||
| Junction and Storage Temperature | T J , T stg | 55 to +150 | C | ||
| ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) | |||||
| CollectorEmitter Breakdown Voltage (IC = 10 mA) | V (BR)CEO | 65 | 45 | 30 | v |
| CollectorEmitter Breakdown Voltage (IC = 10 A, VEB = 0) | V (BR)CES | 80 | 50 | 30 | v |
| CollectorBase Breakdown Voltage (IC = 10 A) | V (BR)CBO | 80 | 50 | 30 | v |
| EmitterBase Breakdown Voltage (IE = 1.0 A) | V (BR)EBO | 5.0 | 5.0 | 5.0 | v |
| Collector Cutoff Current (VCB = 30 V) | I CBO | 15 | nA | ||
| Collector Cutoff Current (VCB = 30 V, TA = 150C) | I CBO | 4.0 | A | ||
| DC Current Gain (IC = 2.0 mA, V CE = 5.0 V) | h FE | 125180 | 220290 | 420520 | |
| CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | V CE(sat) | 0.3 | V | ||
| CollectorEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) | V CE(sat) | 0.65 | V | ||
| BaseEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | V BE(sat) | 0.7 | V | ||
| BaseEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) | V BE(sat) | 0.9 | V | ||
| BaseEmitter Voltage (IC = 2.0 mA, V CE = 5.0 V) | V BE(on) | 0.6 | 0.75 | V | |
| BaseEmitter Voltage (IC = 10 mA, V CE = 5.0 V) | V BE(on) | 0.82 | V | ||
| CurrentGain Bandwidth Product (IC = 10 mA, V CE = 5.0 Vdc, f = 100 MHz) | f T | 100 | MHz | ||
| Output Capacitance (V CB = 10 V, f = 1.0 MHz) | Cob | 4.5 | pF | ||
| Noise Figure (IC= 0.2 mA,V CE= 5.0 Vdc, RS= 2.0 k, f =1.0 kHz, BW= 200 Hz) | NF | 10 | dB | ||
2212131909_LRC-LBC857CWT1G_C5273079.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
