High Surge Current Schottky Bridge Rectifier LGE MB110S Suitable for Single Phase Rectifier Circuits
Key Attributes
Model Number:
MB110S
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
40A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
850mV@0.5A
Current - Rectified:
1A
Voltage - DC Reverse(Vr):
100V
Mfr. Part #:
MB110S
Package:
MBS
Product Description
MB12S THRU MB110S Schottky Bridge Rectifier
The MB12S thru MB110S series are Schottky bridge rectifiers designed for general-purpose single-phase bridge rectifier applications. They feature Schottky chips for high surge forward current capability and low forward voltage (VF). These rectifiers are suitable for use on alumina or glass-epoxy substrates.
Product Attributes
- Brand: Luguang
- Origin: China
Technical Specifications
| Item | Symbol | Unit | MB12S | MB14S | MB16S | MB18S | MB110S | Conditions | |
| Repetitive Peak Reverse Voltage | VRRM | V | 20 | 40 | 60 | 80 | 100 | ||
| Average Rectified Output Current | IO | A | 1.0 | 60Hz sine wave, R-load, Ta=25 (On glass-epoxi substrate: 0.8) | |||||
| Surge(Non-repetitive)Forward Current | IFSM | A | 40 | 60HZ sine wave, 1 cycle, Tj=25 | |||||
| Current Squared Time | I2t | AS | 6.6 | 1mst<8.3ms Tj=25, Rating of per diode | |||||
| Storage Temperature | Tstg | -55 ~+150 | |||||||
| Junction Temperature | Tj | -55 ~+150 | |||||||
| Peak Forward Voltage | VFM | V | 0.55 | 0.65 | 0.85 | IFM=0.5A, Pulse measurement, Rating of per diode | |||
| Peak Reverse Current | IRRM | mA | 0.5 | VRM=VRRM , Pulse measurement, Rating of per diode | |||||
| Thermal Resistance (Junction to Ambient) | RJ-A | /W | 76 | Between junction and ambient, On alumina substrate | |||||
| Thermal Resistance (Junction to Ambient) | RJ-A | /W | 134 | Between junction and ambient, On glass-epoxi substrate | |||||
| Thermal Resistance (Junction to Lead) | RJ-L | /W | 20 | Between junction and lead | |||||
Contact: http://www.luguang.cn, mail:lge@luguang.cn
2410121849_LGE-MB110S_C5364324.pdf
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