NPN Silicon General Purpose Transistor LRC LMBT3904WT1G with 40V Collector Emitter Breakdown Voltage

Key Attributes
Model Number: LMBT3904WT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT3904WT1G
Package:
SC-70(SOT-323)
Product Description

Product Overview

The LMBT3904WT1G and S-LMBT3904WT1G are NPN Silicon General Purpose Transistors designed for various applications. The S-prefix variant is specifically tailored for automotive and other uses requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable. These devices are RoHS compliant and Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material: Silicon
  • Certifications: RoHS, Halogen Free, AEC-Q101 (S-prefix only)

Technical Specifications

ModelDescriptionVCEO (Vdc)VCBO (Vdc)VEBO (Vdc)IC (mAdc)PD (mW)RJA (C/W)TJ,Tstg (C)Shipping
LMBT3904WT1GGeneral Purpose Transistor NPN Silicon406062001000833-55~+1503000/Tape&Reel
S-LMBT3904WT1GGeneral Purpose Transistor NPN Silicon (AEC-Q101 Qualified)406062001000833-55~+15010000/Tape&Reel
CharacteristicSymbolMin.Typ.Max.Unit
CollectorEmitter Breakdown VoltageVBR(CEO)40--V
CollectorBase Breakdown VoltageVBR(CBO)60--V
EmitterBase Breakdown VoltageVBR(EBO)6--V
Collector Cutoff CurrentICEX--50nA
Base Cutoff CurrentIBL--50nA
DC Current GainHFE40-300-
CollectorEmitter Saturation VoltageVCE(sat)-0.20.95V
BaseEmitter Saturation VoltageVBE(sat)-0.650.85V
CurrentGain Bandwidth ProductfT300--MHz
Output CapacitanceCobo-4-pF
Input CapacitanceCibo-8-pF
Delay Timetd--35ns
Rise Timetr--35ns
Storage Timets--200ns
Fall Timetf--50ns

1808272351_LRC-LMBT3904WT1G_C131780.pdf

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