NPN Silicon General Purpose Transistor LRC LMBT3904WT1G with 40V Collector Emitter Breakdown Voltage
Product Overview
The LMBT3904WT1G and S-LMBT3904WT1G are NPN Silicon General Purpose Transistors designed for various applications. The S-prefix variant is specifically tailored for automotive and other uses requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable. These devices are RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material: Silicon
- Certifications: RoHS, Halogen Free, AEC-Q101 (S-prefix only)
Technical Specifications
| Model | Description | VCEO (Vdc) | VCBO (Vdc) | VEBO (Vdc) | IC (mAdc) | PD (mW) | RJA (C/W) | TJ,Tstg (C) | Shipping |
| LMBT3904WT1G | General Purpose Transistor NPN Silicon | 40 | 60 | 6 | 200 | 1000 | 833 | -55~+150 | 3000/Tape&Reel |
| S-LMBT3904WT1G | General Purpose Transistor NPN Silicon (AEC-Q101 Qualified) | 40 | 60 | 6 | 200 | 1000 | 833 | -55~+150 | 10000/Tape&Reel |
| Characteristic | Symbol | Min. | Typ. | Max. | Unit |
| CollectorEmitter Breakdown Voltage | VBR(CEO) | 40 | - | - | V |
| CollectorBase Breakdown Voltage | VBR(CBO) | 60 | - | - | V |
| EmitterBase Breakdown Voltage | VBR(EBO) | 6 | - | - | V |
| Collector Cutoff Current | ICEX | - | - | 50 | nA |
| Base Cutoff Current | IBL | - | - | 50 | nA |
| DC Current Gain | HFE | 40 | - | 300 | - |
| CollectorEmitter Saturation Voltage | VCE(sat) | - | 0.2 | 0.95 | V |
| BaseEmitter Saturation Voltage | VBE(sat) | - | 0.65 | 0.85 | V |
| CurrentGain Bandwidth Product | fT | 300 | - | - | MHz |
| Output Capacitance | Cobo | - | 4 | - | pF |
| Input Capacitance | Cibo | - | 8 | - | pF |
| Delay Time | td | - | - | 35 | ns |
| Rise Time | tr | - | - | 35 | ns |
| Storage Time | ts | - | - | 200 | ns |
| Fall Time | tf | - | - | 50 | ns |
1808272351_LRC-LMBT3904WT1G_C131780.pdf
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