AEC Q101 Qualified PNP Silicon Transistor LRC S-LBC807-40WT1G RoHS Compliant Halogen Free Automotive
Key Attributes
Model Number:
S-LBC807-40WT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LBC807-40WT1G
Package:
SC-70
Product Description
Product Overview
The LBC807-40WT1G and S-LBC807-40WT1G are PNP Silicon General Purpose Transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualified and PPAP capable. These transistors comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements, Halogen Free
- Certifications: AEC-Q101 qualified (S-prefix), PPAP capable (S-prefix)
- Package Type: SC70(SOT-323)
Technical Specifications
| Parameter | Symbol | LBC807-40WT1G / S-LBC807-40WT1G | Unit |
| MAXIMUM RATINGS | |||
| CollectorEmitter Voltage | VCEO | -45 | V |
| CollectorBase Voltage | VCBO | -50 | V |
| EmitterBase Voltage | VEBO | -5 | V |
| Collector Current(Continuous) | IC | -500 | mA |
| THERMAL CHARACTERISTICS | |||
| Total Device Dissipation FR5 Board (Note 1) | PD | 150 | mW |
| Derate above 25C | 1.2 | mW/C | |
| Thermal Resistance, Junction to Ambient | RJA | 833 | C/W |
| Total Device Dissipation Alumina Substrate (Note 2) | PD | 200 | mW |
| Derate above 25C | 1.6 | mW/C | |
| Thermal Resistance, Junction to Ambient | RJA | 625 | C/W |
| Junction and Storage Temperature | TJ,Tstg | -55~+150 | C |
| ELECTRICAL CHARACTERISTICS (Ta= 25C) | |||
| CollectorEmitter Breakdown Voltage (IC = -10 mA) | V(BR)CEO | -45 | V |
| CollectorEmitter Breakdown Voltage (IC = -10 A, VEB = 0) | V(BR)CES | -50 | V |
| EmitterBase Breakdown Voltage (IE = -1.0 A) | V(BR)EBO | -5 | V |
| Collector Cutoff Current (VCB = -20 V) | ICBO | -5 | A |
| Collector Cutoff Current (VCB = -20 V, TA= 150C) | ICBO | -100 | nA |
| DC Current Gain (IC = 100 mA, VCE = 1.0 V) | hFE | 250 | |
| DC Current Gain (IC = 500 mA, VCE = 1.0 V) | hFE | 100 | |
| CollectorEmitter Saturation Voltage (IC = 500 mA, IB = 50 mA) | VCE(sat) | -0.7 | V |
| BaseEmitter Voltage (IC = 500 mA, VCE = 1.0 V) | VBE(on) | -1.2 | V |
| CurrentGain Bandwidth Product (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) | fT | 100 | MHz |
| Output Capacitance (VCB = -10 V, f = 1.0 MHz) | Cobo | 10 | pF |
| DEVICE MARKING AND ORDERING INFORMATION | |||
| Device Marking | YL | ||
| Ordering Information | LBC807-40WT1G | 3000/Tape&Reel | |
| Ordering Information | S-LBC807-40WT1G | 10000/Tape&Reel | |
2410010403_LRC-S-LBC807-40WT1G_C2932858.pdf
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