General purpose amplifier transistor LRC LMBT2222AWT1G NPN silicon device with surface mount package
Key Attributes
Model Number:
LMBT2222AWT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT2222AWT1G
Package:
SC-70(SOT-323)
Product Description
Product Overview
The LMBT2222AWT1G is a general-purpose NPN silicon transistor designed for amplifier applications. It is housed in a low-power surface-mount SOT323/SC70 package.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Certifications: AEC-Q101 Qualified, PPAP Capable
- RoHS Compliance: Declared
- Prefix for Automotive Applications: S-
Technical Specifications
| Part Number | CollectorEmitter Voltage (V CEO) | CollectorBase Voltage (V CBO) | EmitterBase Voltage (V EBO) | Collector Current (I C) | Total Device Dissipation (PD) | Thermal Resistance (RJA) | DC Current Gain (hFE) | CollectorEmitter Saturation Voltage (VCE(sat)) | BaseEmitter Saturation Voltage (V BE(sat)) | CurrentGain Bandwidth Product (f T) | Output Capacitance (C obo) | Input Capacitance (C ibo) | Input Impedance (h ie) | Voltage Feedback Ratio (h re) | SmallSignal Current Gain (h fe) | Output Admittance (h oe) | Noise Figure (NF) | Delay Time (t d) | Rise Time (t r) | Storage Time (t s) | Fall Time (t f) |
| LMBT2222AWT1G | 40 Vdc | 75 Vdc | 6.0 Vdc | 600 mAdc | 150 mW (TA = 25C) | 833 C/W | 35100 (IC=0.1150mAdc, VCE=10Vdc) 40 (IC=500mAdc, VCE=10Vdc) | 0.3 Vdc (IC=150mAdc, IB=15mAdc) 1.0 Vdc (IC=500mAdc, IB=50mAdc) | 0.61.2 Vdc (IC=150mAdc, IB=15mAdc) 2.0 Vdc (IC=500mAdc, IB=50mAdc) | 300 MHz (IC=20mAdc, VCE=20Vdc, f=100MHz) | 8.0 pF (VCB=10Vdc, IE=0, f=1.0MHz) | 30 pF (VEB=0.5Vdc, IC=0, f=1.0MHz) | 0.251.25 k (VCE=10Vdc, IC=10mAdc, f=1.0kHz) | 4.0 X 10 4 (VCE=10Vdc, IC=10mAdc, f=1.0kHz) | 75375 (VCE=10Vdc, IC=10mAdc, f=1.0kHz) | 25200 mhos (VCE=10Vdc, IC=10mAdc, f=1.0kHz) | 4.0 dB (VCE=10Vdc, IC=100Adc, RS=1.0k, f=1.0kHz) | 10 ns (VCC=3.0Vdc, VBE=0.5Vdc, IC=150mAdc, IB1=15mAdc) | 25 ns (VCC=3.0Vdc, VBE=0.5Vdc, IC=150mAdc, IB1=15mAdc) | 225 ns (VCC=30Vdc, IC=150mAdc, IB1=15mAdc, IB2=15mAdc) | 60 ns (VCC=30Vdc, IC=150mAdc, IB1=15mAdc, IB2=15mAdc) |
1808272325_LRC-LMBT2222AWT1G_C136179.pdf
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