Silicon Carbide MOSFET LGE LGE3M80120Q with High Junction Temperature and Parallel Operation Capability
Key Attributes
Model Number:
LGE3M80120Q
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
42A
Operating Temperature -:
-55℃~+175℃
RDS(on):
100mΩ
Reverse Transfer Capacitance (Crss@Vds):
6.7pF
Input Capacitance(Ciss):
1.68nF
Pd - Power Dissipation:
300W
Output Capacitance(Coss):
69pF
Gate Charge(Qg):
76nC
Mfr. Part #:
LGE3M80120Q
Package:
TO-247-4
Product Description
Product Overview
The LGE3M80120Q is a Silicon Carbide Power MOSFET designed for high-voltage applications. It features high speed, low on-resistance, low parasitic capacitance, and high junction temperature capabilities, making it suitable for demanding power electronics systems. This device offers higher system efficiency, convenience for parallel operation without thermal runaway, and enhanced reliability in hard-switching environments. It is also easy to drive.
Product Attributes
- Brand: LGE
- Material: Silicon Carbide
- Package: TO-247-4
- Origin: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Part Number | VDS (V) | ID @25C (A) | RDS(ON) (m) | Package | Features | Applications |
| LGE3M80120Q | 1200 | 42 | 80 | TO-247-4 | High voltage, low on resistance; High speed, low parasitic capacitance; High junction temperature; Fast recovery diode | Motor drive, Photovoltaic inverter, UPS power supply, High voltage DC/DC converter, Switching Mode Power Supply |
| Parameter | Symbol | Value | Unit | Test Condition |
| Drain-source voltage | VDS | 1200 | V | VGS = 0V, ID =100A |
| Gate-source voltage | VGS | -5 to 20 | V | Recommended maximum |
| Continuous drain current | ID | 42 (TC=25C), 31 (TC=100C) | A | VGS = 20V |
| Pulsed drain current | IDM | 70 | A | Pulse width limited by SOA |
| Power dissipation | PTOT | 300 | W | TC = 25C |
| Storage temperature range | Tstg | -55 to +175 | C | |
| Operating and junction temperature | Tj | -55 to +175 | C | |
| Soldre temperature | TL | 260 | C | Wave soldering only allowed at leads, 1.6 mm from case for 10 s |
| Thermal resistance to shell | RthJC | 0.5 | C/W | Typ. |
| Zero gate voltage drain current | IDSS | 5 (Min), 100 (Max) | A | VDS = 1200V, VGS = 0V |
| Gate leakage current | IGSS | 100 | nA | VDS = 0V, VGS = -5~20V |
| Gate threshold voltage | VTH | 3.6 (Typ), 2.7 (TC=175C) | V | VGS = VDS, ID = 3.8mA |
| Drain-source on-state resistance | RON | 80 (Typ), 130 (Max) | m | VGS = 20V, ID = 10A, TJ = 25 |
| Drain-source on-state resistance | RON | 100 | m | VGS = 20V, ID = 10A, TJ = 175 |
| Input capacitance | Ciss | 1680 | pF | VDS = 800V, VGS = 0V, f = 1MHZ, VAC = 25mV |
| Output capacitance | Coss | 69 | pF | VDS = 800V, VGS = 0V, f = 1MHZ, VAC = 25mV |
| Reverse transfer capacitance | Crss | 6.7 | pF | VDS = 800V, VGS = 0V, f = 1MHZ, VAC = 25mV |
| The output capacitor stores energy | Eoss | 27 | J | VDS = 800V, VGS = 0V, f = 1MHZ, VAC = 25mV |
| Single pulse avalanche energy | EAS | 0.75 | J | ID=20A, VDD=50V, L=2mH |
| Total gate charge | Qg | 76 | nC | VDS = 800V, ID = 20A, VGS = -5 to 20V |
| Gate to source charge | Qgs | 29 | nC | VDS = 800V, ID = 20A, VGS = -5 to 20V |
| Gate to drain charge | Qgd | 34 | nC | VDS = 800V, ID = 20A, VGS = -5 to 20V |
| Gate input resistance | Rg | 4.2 | f =1MHZ | |
| Turn-on switching energy | EON | 154 | J | VDS = 800V, ID = 20A, VGS = -3.5 to 20V, RG(ext) =2.0, L = 290H |
| Turn-off switching energy | EOFF | 80 | J | VDS = 800V, ID = 20A, VGS = -3.5 to 20V, RG(ext) =2.0, L = 290H |
| Turn-on delay time | td(on) | 8.9 | ns | VDS = 800V, ID = 20A, VGS = -3.5 to 20V, RG(ext) =2.0, L = 290H |
| Rise time | tr | 19.9 | ns | VDS = 800V, ID = 20A, VGS = -3.5 to 20V, RG(ext) =2.0, L = 290H |
| Turn-off delay time | td(off) | 14.7 | ns | VDS = 800V, ID = 20A, VGS = -3.5 to 20V, RG(ext) =2.0, L = 290H |
| Fall time | tf | 9.5 | ns | VDS = 800V, ID = 20A, VGS = -3.5 to 20V, RG(ext) =2.0, L = 290H |
| Diode forward voltage | VSD | 4.7 (Typ), 4.2 (TJ = 175C) | V | ISD = 10A, VGS = 0V |
| Reverse recovery time | trr | 10.2 | ns | VGS= 0V, ISD = 20A, VR = 800V, di/dt = 1100A/us |
| Reverse recovery charge | Qrr | 64 | nC | VGS= 0V, ISD = 20A, VR = 800V, di/dt = 1100A/us |
| Reverse recovery peak current | IRRM | 11.3 | A | VGS= 0V, ISD = 20A, VR = 800V, di/dt = 1100A/us |
Caution
This device is sensitive to electrostatic discharge. Users should follow ESD handing procedures.
2410301412_LGE-LGE3M80120Q_C28148575.pdf
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