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quality High Voltage SCR Littelfuse 2N6509G Silicon Controlled Rectifier for Heating and Motor Applications factory
quality High Voltage SCR Littelfuse 2N6509G Silicon Controlled Rectifier for Heating and Motor Applications factory

High Voltage SCR Littelfuse 2N6509G Silicon Controlled Rectifier for Heating and Motor Applications

Key Attributes
Model Number: 2N6509G
Product Custom Attributes
Holding Current (Ih):
40mA
Current - Gate Trigger(Igt):
30mA
Voltage - On State(Vtm):
1.8V
Current - On State(It(RMS)):
25A
Peak Off - State Voltage(Vdrm):
800V
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
2N6509G
Package:
TO-220AB
Product Description

Product Overview

The 2N6504 Series is a line of Silicon Controlled Rectifiers (SCRs) designed for half-wave AC control applications. These devices feature glass-passivated junctions for enhanced parameter uniformity and stability, and a Thermowatt construction for low thermal resistance and high heat dissipation. They are suitable for applications such as motor controls, heating controls, and power supply crowbar circuits.

Product Attributes

  • Brand: ON Semiconductor
  • Pb-Free Options Available
  • Package Type: TO-220AB

Technical Specifications

DevicePeak Repetitive Off-State Voltage (VDRM/VRRM)On-State Current RMS (IT(RMS))Average On-State Current (IT(AV))Peak Non-repetitive Surge Current (ITSM)Operating Junction Temperature RangeStorage Temperature Range
2N650450 V25 A16 A250 A-40 to +125 C-40 to +150 C
2N6505100 V
2N6507400 V
2N6508600 V
2N6509800 V
CharacteristicSymbolValueUnitNotes
Forward Peak Gate PowerPGM20WPulse Width 1.0 s, TC = 85C
Forward Average Gate PowerPG(AV)0.5Wt = 8.3 ms, TC = 85C
Forward Peak Gate CurrentIGM2.0APulse Width 1.0 s, TC = 85C
Thermal Resistance, Junction-to-CaseR JC1.5C/W
Maximum Lead Temperature for SolderingTL260C1/8 in from Case for 10 Seconds
Peak Repetitive Forward or Reverse Blocking Current (TJ = 25C)IDRM, IRRM-10 AGate Open
Peak Repetitive Forward or Reverse Blocking Current (TJ = 125C)IDRM, IRRM-2.0 mAGate Open
Forward On-State Voltage (ITM = 50 A)VTM-1.8 VNote 2
Gate Trigger Current (TC = 25C)IGT-9.0 mAVAK = 12 Vdc, RL = 100
Gate Trigger Current (TC = -40C)IGT-30 mAVAK = 12 Vdc, RL = 100
Gate Trigger Voltage (TC = -40C)VGT-1.5 VVAK = 12 Vdc, RL = 100
Gate Non-Trigger Voltage (TJ = 125C)VGD0.2VVAK = 12 Vdc, RL = 100
Holding Current (TC = 25C)IH-18 mAVAK = 12 Vdc, Initiating Current = 200 mA, Gate Open
Holding Current (TC = -40C)IH-40 mAVAK = 12 Vdc, Initiating Current = 200 mA, Gate Open
Turn-On Timetgt-2.0 sITM = 25 A, IGT = 50 mAdc
Turn-Off Time (TJ = 25C)tq-15 sVDRM = rated voltage, ITM = 25 A, IR = 25 A
Turn-Off Time (TJ = 125C)tq-35 sVDRM = rated voltage, ITM = 25 A, IR = 25 A
Critical Rate of Rise of Off-State Voltagedv/dt-50 V/sGate Open, Rated VDRM, Exponential Waveform

2410010304_Littelfuse-2N6509G_C151717.pdf

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