Intelligent power module LINKOSEMI LKS1D5005DT featuring integrated high voltage components for motor drive applications
Key Attributes
Model Number:
LKS1D5005DT
Product Custom Attributes
High-side Bias Voltage(Vbs):
12V~18V
Operating Temperature:
-40℃~+150℃
Voltage - Isolation:
-
Frequency - Switching:
20kHz
Mfr. Part #:
LKS1D5005DT
Package:
ESOP-13
Product Description
Product Overview
The LKSP1D5005DT is a high-voltage single-phase Intelligent Power Module (IPM) integrating a high-voltage IC and high-performance MOSFETs. It is suitable for Brushless DC (BLDC) and Permanent Magnet Synchronous Motors (PMSM). The low-side MOSFET source can be used for current sampling. The input includes a Schmitt trigger and is compatible with 3.3V/5V/15V logic levels. The LKSP1D5005DT is available in an ESOP13 package.
Product Attributes
- Brand: BPSemi (implied by website URLs)
- Origin: China (implied by file name _CN_DS_Rev_0.1)
- Certifications: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Condition | Min | Typical | Max | Unit | Notes |
| Absolute Maximum Ratings | ||||||
| VCC (Control Supply Voltage) | VCC and COM terminals | 10 | 20 | V | ||
| VBS (High-side Bias Voltage) | VB and VS terminals | -0.3 | 25 | V | ||
| VIN (Input Signal Voltage) | VIN and COM terminals | -0.3 | VCC+0.3 | V | ||
| TJ (Operating Junction Temperature) | -40 | 150 | Note 2 | |||
| TSTG (Storage Temperature) | -40 | 125 | ||||
| VDSS (MOSFET Drain-Source Voltage) | 500 | V | ||||
| ID (MOSFET Continuous Operating Current) | TC=25 | 5 | A | Note 2 | ||
| Recommended Operating Conditions | ||||||
| VPN (Power Supply Voltage) | Between PN terminals | 300 | 400 | V | ||
| VCC (Control Supply Voltage) | Between VCC and COM terminals | 12.0 | 15.0 | 18.0 | V | |
| VBS (High-side Bias Voltage) | Between VB and VS terminals | 12.0 | 15.0 | 18.0 | V | |
| TDEAD (Dead Time) | VCC = VBS = 12.0 ~ 18.0V, TJ <150C | 1.0 | us | |||
| FPWM (PWM Switching Frequency) | TJ <150C | 15 | KHz | |||
| Electrical Characteristics | ||||||
| BVDSS (Drain-Source Breakdown Voltage) | VIN = 0 V, ID = 250 uA | 500 | V | |||
| RDS(ON) (MOSFET On-Resistance) | VCC = VBS = 15 V, VIN = 5 V, ID =2.5A | 1.4 | ohm | |||
| TON (Turn-on Time) | VPN =400 V, VCC = VBS = 15 V, ID =5A, VIN = 0~5 V, Inductive Load L = 2.8 mH | 780 | ns | High-side and low-side MOSFET | ||
| TOFF (Turn-off Time) | 250 | ns | High-side and low-side MOSFET | |||
| VFB (Bootstrap Diode Forward Voltage) | IF = 0.8A | 1.65 | V | |||
| TRRB (Bootstrap Diode Reverse Recovery Time) | IF = 0.5A | 40 | ns | |||
| IQCC (Quiescent VCC Supply Current) | VCC = 15V, VIN = 0V | 180 | uA | |||
| VCC_UVLO (VCC Undervoltage Lockout) | Falling edge | 8.1 | V | |||
| VBS_UVLO (VBS Undervoltage Lockout) | Falling edge | 7.8 | V | |||
| VIH (Input High Threshold Voltage) | 2.9 | V | ||||
| VIL (Input Low Threshold Voltage) | 0.45 | V | ||||
2402210951_LINKOSEMI-LKS1D5005DT_C19267270.pdf
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