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quality Durable High Voltage IGBT Device Littelfuse IXYH25N250CHV Suitable for UPS and Resonant Mode Circuits factory
quality Durable High Voltage IGBT Device Littelfuse IXYH25N250CHV Suitable for UPS and Resonant Mode Circuits factory

Durable High Voltage IGBT Device Littelfuse IXYH25N250CHV Suitable for UPS and Resonant Mode Circuits

Key Attributes
Model Number: IXYH25N250CHV
Product Custom Attributes
Mfr. Part #:
IXYH25N250CHV
Package:
TO-247
Product Description

IXYT25N250CHV / IXYH25N250CHV High Voltage XPTTM IGBT

The IXYT25N250CHV and IXYH25N250CHV are high voltage XPTTM IGBTs designed for high power density applications. They offer high blocking voltage, high peak current capability, and low saturation voltage, with advantages such as low gate drive requirement. These IGBTs are suitable for switch-mode and resonant-mode power supplies, uninterruptible power supplies (UPS), laser generators, capacitor discharge circuits, and AC switches.

Product Attributes

  • Brand: IXYS
  • Technology: XPTTM IGBT
  • Package Options: TO-268HV (IXYT), TO-247HV (IXYH)
  • Origin: USA (implied by patent information)

Technical Specifications

Symbol Test Conditions Min. Typ. Max. Units IXYT25N250CHV / IXYH25N250CHV
BVCES IC = 250A, VGE = 0V 2500 V
VGE(th) IC = 250A, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 25 A
TJ = 100C 100 A
IGES VCE = 0V, VGE = 20V 100 nA
VCE(sat) IC = 25A, VGE = 15V, Note 1 3.4 4.0 V
TJ = 150C 4.7 V
gfs IC = 25A, VCE = 10V, Note 1 16 27 S
RGi 2.8
Cies VCE = 25V, VGE = 0V, f = 1MHz 3060 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 114 pF
Cres VCE = 25V, VGE = 0V, f = 1MHz 43 pF
Qg(on) IC = 25A, VGE = 15V, VCE = 0.5 VCES 147 nC
Qge IC = 25A, VGE = 15V, VCE = 0.5 VCES 16 nC
Qgc IC = 25A, VGE = 15V, VCE = 0.5 VCES 68 nC
td(on) Inductive load, TJ = 150C, IC = 25A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 15 ns
Inductive load, TJ = 25C, IC = 25A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 18 ns
tri Inductive load, TJ = 150C, IC = 25A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 34 ns
Inductive load, TJ = 25C, IC = 25A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 33 ns
Eon Inductive load, TJ = 150C, IC = 25A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 8.3 mJ
Inductive load, TJ = 25C, IC = 25A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 11.0 mJ
td(off) Inductive load, TJ = 150C, IC = 50A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 230 ns
Inductive load, TJ = 25C, IC = 50A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 225 ns
tfi Inductive load, TJ = 150C, IC = 50A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 246 ns
Inductive load, TJ = 25C, IC = 50A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 350 ns
Eoff Inductive load, TJ = 150C, IC = 50A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 7.3 mJ
Inductive load, TJ = 25C, IC = 50A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 10.5 mJ
RthJC 0.16 C/W
RthCS 0.15 C/W

Note 1: Pulse test, t 300s, duty cycle, d 2%.

Note 2: Inductive load, TJ = 150C, IC = 25A, VGE = 15V, VCE = 0.5 VCES, RG = 5.


2410301804_Littelfuse-IXYH25N250CHV_C6069443.pdf

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